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Article: Modification of Schottky barrier height by surface grain boundaries of polycrystalline silicon

TitleModification of Schottky barrier height by surface grain boundaries of polycrystalline silicon
Authors
Issue Date1980
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1980, v. 37 n. 10, p. 945-947 How to Cite?
AbstractIt is found that the Schottky barrier height φBn depends on the grain-boundary surface state density DBS and the boundary density dB, which is defined as the length of grain boundary on the surface per unit area (inversely proportional to the average grain size). Experimental data for Au-polycrystalline-Si (n type) Schottky diodes indicate that the effective grain-boundary state density is approximately 3×1011 cm-1 eV-1 and the change of barrier height is consistent with the proposed model.
Persistent Identifierhttp://hdl.handle.net/10722/155219
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorWu, CMen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:32:25Z-
dc.date.available2012-08-08T08:32:25Z-
dc.date.issued1980en_US
dc.identifier.citationApplied Physics Letters, 1980, v. 37 n. 10, p. 945-947en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155219-
dc.description.abstractIt is found that the Schottky barrier height φBn depends on the grain-boundary surface state density DBS and the boundary density dB, which is defined as the length of grain boundary on the surface per unit area (inversely proportional to the average grain size). Experimental data for Au-polycrystalline-Si (n type) Schottky diodes indicate that the effective grain-boundary state density is approximately 3×1011 cm-1 eV-1 and the change of barrier height is consistent with the proposed model.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleModification of Schottky barrier height by surface grain boundaries of polycrystalline siliconen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.91770en_US
dc.identifier.scopuseid_2-s2.0-0141561143en_US
dc.identifier.volume37en_US
dc.identifier.issue10en_US
dc.identifier.spage945en_US
dc.identifier.epage947en_US
dc.identifier.isiWOS:A1980LB78500036-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWu, CM=23032716500en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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