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Article: A study of the material loss and other processes involved during annealing of GaN at growth temperatures

TitleA study of the material loss and other processes involved during annealing of GaN at growth temperatures
Authors
Issue Date2003
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/cplett
Citation
Chemical Physics Letters, 2003, v. 380 n. 1-2, p. 105-110 How to Cite?
AbstractRutherford backscattering spectrometry (RBS) was performed on GaN layers grown on sapphire and annealed at temperatures between 500 and 1100°C. Protons of energy 2 MeV were used for nanoscale depth-resolved RBS measurements. The simulation package SIMNRA was used to extract quantitative information from RBS results. Our results describe quantitatively the complete evaporation of GaN surface layers followed by partial evaporation of gallium and nitrogen atoms from successive layers along with incorporation of oxygen from the ambient during annealing. The formation of micron-sized islands or terraces on GaN surface during annealing has been explained using RBS and atomic force microscopy results. © 2003 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155218
ISSN
2015 Impact Factor: 1.86
2015 SCImago Journal Rankings: 0.757
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorRana, MAen_US
dc.contributor.authorOsipowicz, Ten_US
dc.contributor.authorChoi, HWen_US
dc.contributor.authorBreese, MBHen_US
dc.contributor.authorChua, SJen_US
dc.date.accessioned2012-08-08T08:32:24Z-
dc.date.available2012-08-08T08:32:24Z-
dc.date.issued2003en_US
dc.identifier.citationChemical Physics Letters, 2003, v. 380 n. 1-2, p. 105-110en_US
dc.identifier.issn0009-2614en_US
dc.identifier.urihttp://hdl.handle.net/10722/155218-
dc.description.abstractRutherford backscattering spectrometry (RBS) was performed on GaN layers grown on sapphire and annealed at temperatures between 500 and 1100°C. Protons of energy 2 MeV were used for nanoscale depth-resolved RBS measurements. The simulation package SIMNRA was used to extract quantitative information from RBS results. Our results describe quantitatively the complete evaporation of GaN surface layers followed by partial evaporation of gallium and nitrogen atoms from successive layers along with incorporation of oxygen from the ambient during annealing. The formation of micron-sized islands or terraces on GaN surface during annealing has been explained using RBS and atomic force microscopy results. © 2003 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/cpletten_US
dc.relation.ispartofChemical Physics Lettersen_US
dc.titleA study of the material loss and other processes involved during annealing of GaN at growth temperaturesen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.cplett.2003.09.019en_US
dc.identifier.scopuseid_2-s2.0-0141433294en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0141433294&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume380en_US
dc.identifier.issue1-2en_US
dc.identifier.spage105en_US
dc.identifier.epage110en_US
dc.identifier.isiWOS:000186015000017-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridRana, MA=7006672846en_US
dc.identifier.scopusauthoridOsipowicz, T=7005277353en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridBreese, MBH=7005563036en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.citeulike1598857-

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