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Article: Optimization of plasma nitridation for reliability enhancement of low-temperature gate dielectric in MOS devices

TitleOptimization of plasma nitridation for reliability enhancement of low-temperature gate dielectric in MOS devices
Authors
KeywordsHigh-Field Stress
Low-Temperature Processing
N2o
Nitridation
No
Plasma
Issue Date2003
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 2003, v. 47 n. 11, p. 2049-2053 How to Cite?
AbstractSilicon MOS capacitors fabricated solely by low-temperature processes (under 600 °C) are treated with plasma nitridation under different processing conditions. Their properties are investigated at room temperature under high-field stress. It is found that gas flowrate has limited effect on the plasma nitridation process, while an increase in RF power produces more damages to the devices. Chamber pressure is shown to be the critical factor. Moreover, NO-nitrided device gives better performance than N 2O-nitrided one. Both kinds of plasmas are effective in improving the hardness of the gate oxide against stress-induced damage, which is characterized by a smaller shift in flatband voltage and a smaller increase in interface states after the stress. These results show that plasma nitridation has positive effects on the reliability of low-temperature-fabricated devices, which play an important role in flat-panel display systems on glass. © 2003 Elsevier Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155217
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorOr, DCTen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorSin, JKOen_US
dc.date.accessioned2012-08-08T08:32:24Z-
dc.date.available2012-08-08T08:32:24Z-
dc.date.issued2003en_US
dc.identifier.citationSolid-State Electronics, 2003, v. 47 n. 11, p. 2049-2053en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/155217-
dc.description.abstractSilicon MOS capacitors fabricated solely by low-temperature processes (under 600 °C) are treated with plasma nitridation under different processing conditions. Their properties are investigated at room temperature under high-field stress. It is found that gas flowrate has limited effect on the plasma nitridation process, while an increase in RF power produces more damages to the devices. Chamber pressure is shown to be the critical factor. Moreover, NO-nitrided device gives better performance than N 2O-nitrided one. Both kinds of plasmas are effective in improving the hardness of the gate oxide against stress-induced damage, which is characterized by a smaller shift in flatband voltage and a smaller increase in interface states after the stress. These results show that plasma nitridation has positive effects on the reliability of low-temperature-fabricated devices, which play an important role in flat-panel display systems on glass. © 2003 Elsevier Ltd. All rights reserved.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid-State Electronicsen_US
dc.subjectHigh-Field Stressen_US
dc.subjectLow-Temperature Processingen_US
dc.subjectN2oen_US
dc.subjectNitridationen_US
dc.subjectNoen_US
dc.subjectPlasmaen_US
dc.titleOptimization of plasma nitridation for reliability enhancement of low-temperature gate dielectric in MOS devicesen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0038-1101(03)00260-0en_US
dc.identifier.scopuseid_2-s2.0-0043231394en_US
dc.identifier.hkuros90643-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0043231394&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume47en_US
dc.identifier.issue11en_US
dc.identifier.spage2049en_US
dc.identifier.epage2053en_US
dc.identifier.isiWOS:000185502200026-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridOr, DCT=7006099149en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridSin, JKO=7103312667en_US

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