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Article: On the variation of small-signal alphas of a p-n-p-n device with current

TitleOn the variation of small-signal alphas of a p-n-p-n device with current
Authors
Issue Date1967
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid State Electronics, 1967, v. 10 n. 7, p. 641-648 How to Cite?
AbstractThe physical mechanisms that govern the variation of alphas of a silicon p-n-p-n device with current are investigated and an analytical expression for the small-signal alphas is derived. It is shown that both diffusion and electric field contribute to the transport of carriers and, therefore, affect the device transport factors and injection efficiencies. The value of alpha can be tailored to the desired range by choosing properly the base width, the diffusion length and the doping levels. A numerical example is worked out and the small-signal alpha, the d.c. alpha, the transport factor and the injection efficiency are plotted as functions of current for several values of base width of the p-n-p section of a p-n-p-n device. It is seen that the small-signal alpha is always greater than the d.c. alpha in the current range investigated. © 1967.
Persistent Identifierhttp://hdl.handle.net/10722/155213
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675

 

DC FieldValueLanguage
dc.contributor.authorYang, ESen_US
dc.contributor.authorVoulgaris, NCen_US
dc.date.accessioned2012-08-08T08:32:23Z-
dc.date.available2012-08-08T08:32:23Z-
dc.date.issued1967en_US
dc.identifier.citationSolid State Electronics, 1967, v. 10 n. 7, p. 641-648en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/155213-
dc.description.abstractThe physical mechanisms that govern the variation of alphas of a silicon p-n-p-n device with current are investigated and an analytical expression for the small-signal alphas is derived. It is shown that both diffusion and electric field contribute to the transport of carriers and, therefore, affect the device transport factors and injection efficiencies. The value of alpha can be tailored to the desired range by choosing properly the base width, the diffusion length and the doping levels. A numerical example is worked out and the small-signal alpha, the d.c. alpha, the transport factor and the injection efficiency are plotted as functions of current for several values of base width of the p-n-p section of a p-n-p-n device. It is seen that the small-signal alpha is always greater than the d.c. alpha in the current range investigated. © 1967.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid State Electronicsen_US
dc.titleOn the variation of small-signal alphas of a p-n-p-n device with currenten_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0042479971en_US
dc.identifier.volume10en_US
dc.identifier.issue7en_US
dc.identifier.spage641en_US
dc.identifier.epage648en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridVoulgaris, NC=24613097200en_US

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