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Article: Transition with grain size from electrode-limited to bulk-limited conduction in polycrystalline semiconductors

TitleTransition with grain size from electrode-limited to bulk-limited conduction in polycrystalline semiconductors
Authors
Issue Date1980
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1980, v. 36 n. 4, p. 315-317 How to Cite?
AbstractAn experimental study of Au-polycrystalline GaAs Schottky barriers has been made. The current-voltage and capacitance-voltage characteristics of GaAs films of various grain sizes have been measured. Analysis of these data indicate that the transport may be electrode-limited, bulk-limited, or a combination of electrode-limited and bulk-limited conduction processes, depending upon the (average) grain size.
Persistent Identifierhttp://hdl.handle.net/10722/155208
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHwang, Wen_US
dc.contributor.authorCard, HCen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:32:21Z-
dc.date.available2012-08-08T08:32:21Z-
dc.date.issued1980en_US
dc.identifier.citationApplied Physics Letters, 1980, v. 36 n. 4, p. 315-317en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155208-
dc.description.abstractAn experimental study of Au-polycrystalline GaAs Schottky barriers has been made. The current-voltage and capacitance-voltage characteristics of GaAs films of various grain sizes have been measured. Analysis of these data indicate that the transport may be electrode-limited, bulk-limited, or a combination of electrode-limited and bulk-limited conduction processes, depending upon the (average) grain size.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleTransition with grain size from electrode-limited to bulk-limited conduction in polycrystalline semiconductorsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.91476en_US
dc.identifier.scopuseid_2-s2.0-0041078791en_US
dc.identifier.volume36en_US
dc.identifier.issue4en_US
dc.identifier.spage315en_US
dc.identifier.epage317en_US
dc.identifier.isiWOS:A1980JH98900036-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridHwang, W=25630510100en_US
dc.identifier.scopusauthoridCard, HC=7004748017en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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