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Article: Improvement of punchthrough-induced gate-oxide breakdown in n-channel metal-oxide-semiconductor field-effect transistors using rapid thermal nitridation

TitleImprovement of punchthrough-induced gate-oxide breakdown in n-channel metal-oxide-semiconductor field-effect transistors using rapid thermal nitridation
Authors
Issue Date1992
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1992, v. 61 n. 4, p. 453-455 How to Cite?
AbstractGate-dielectric breakdown in small n-channel metal-oxide-semiconductor field-effect transistors has been investigated. It is found that such breakdown is accelerated by large channel current when the devices operate in punchthrough conditions. The situation can be greatly improved by rapid thermal nitridation (RTN) of the gate oxide in the transistors. In addition, the time-dependent dielectric breakdown of the devices operating beyond punchthrough is also considerably improved by RTN. The results indicate that the charge to breakdown Qbd is increased by three orders of magnitude as compared to conventional-oxide devices. All these improvements can be attributed to the nitridation-induced hardening of SiO2/Si interface.
Persistent Identifierhttp://hdl.handle.net/10722/155206
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHuang, MQen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorMa, ZJen_US
dc.contributor.authorWong, Hen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:32:20Z-
dc.date.available2012-08-08T08:32:20Z-
dc.date.issued1992en_US
dc.identifier.citationApplied Physics Letters, 1992, v. 61 n. 4, p. 453-455en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155206-
dc.description.abstractGate-dielectric breakdown in small n-channel metal-oxide-semiconductor field-effect transistors has been investigated. It is found that such breakdown is accelerated by large channel current when the devices operate in punchthrough conditions. The situation can be greatly improved by rapid thermal nitridation (RTN) of the gate oxide in the transistors. In addition, the time-dependent dielectric breakdown of the devices operating beyond punchthrough is also considerably improved by RTN. The results indicate that the charge to breakdown Qbd is increased by three orders of magnitude as compared to conventional-oxide devices. All these improvements can be attributed to the nitridation-induced hardening of SiO2/Si interface.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleImprovement of punchthrough-induced gate-oxide breakdown in n-channel metal-oxide-semiconductor field-effect transistors using rapid thermal nitridationen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.107882en_US
dc.identifier.scopuseid_2-s2.0-0039438393en_US
dc.identifier.volume61en_US
dc.identifier.issue4en_US
dc.identifier.spage453en_US
dc.identifier.epage455en_US
dc.identifier.isiWOS:A1992JE82100028-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridHuang, MQ=7404259759en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridMa, ZJ=7403600924en_US
dc.identifier.scopusauthoridWong, H=7402864932en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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