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Article: Rutherford backscattering analysis of GaN decomposition

TitleRutherford backscattering analysis of GaN decomposition
Authors
Issue Date2003
PublisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspx
Citation
Journal Of Vacuum Science And Technology B: Microelectronics And Nanometer Structures, 2003, v. 21 n. 3, p. 1080-1083 How to Cite?
AbstractRutherford backscattering analysis of GaN decomposition was presented. X-ray photoelectron spectroscopy and atomic force microscopy were also used for the analysis. The development of a surface defect peak at elevated temperatures was found out. Atomic force microscopy revealed severe roughening of the surface.
Persistent Identifierhttp://hdl.handle.net/10722/155205
ISSN
2015 Impact Factor: 1.398
References

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.contributor.authorCheong, MGen_US
dc.contributor.authorRana, MAen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorOsipowicz, Ten_US
dc.contributor.authorPan, JSen_US
dc.date.accessioned2012-08-08T08:32:20Z-
dc.date.available2012-08-08T08:32:20Z-
dc.date.issued2003en_US
dc.identifier.citationJournal Of Vacuum Science And Technology B: Microelectronics And Nanometer Structures, 2003, v. 21 n. 3, p. 1080-1083en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://hdl.handle.net/10722/155205-
dc.description.abstractRutherford backscattering analysis of GaN decomposition was presented. X-ray photoelectron spectroscopy and atomic force microscopy were also used for the analysis. The development of a surface defect peak at elevated temperatures was found out. Atomic force microscopy revealed severe roughening of the surface.en_US
dc.languageengen_US
dc.publisherAmerican Vacuum Society. The Journal's web site is located at http://www.avs.org/literature.jvst.b.aspxen_US
dc.relation.ispartofJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structuresen_US
dc.titleRutherford backscattering analysis of GaN decompositionen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0038794644en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0038794644&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume21en_US
dc.identifier.issue3en_US
dc.identifier.spage1080en_US
dc.identifier.epage1083en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridCheong, MG=7006837761en_US
dc.identifier.scopusauthoridRana, MA=7006672846en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridOsipowicz, T=7005277353en_US
dc.identifier.scopusauthoridPan, JS=7404098334en_US

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