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Article: Stoichiometric and structural alterations in GaN thin films during annealling

TitleStoichiometric and structural alterations in GaN thin films during annealling
Authors
Issue Date2003
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2003, v. 77 n. 1, p. 103-108 How to Cite?
AbstractAnnealling experiments were performed on GaN layers, grown on sapphire, over a wide range of temperatures (500-1100°C). Rutherford Backscattering Spectrometry (RBS) was performed in random and <0001> channelling geometries using 2 MeV protons and helium ions to determine the stoichiometric and structural alterations produced during annealling. We present here, for the first time, a comprehensive and quantitative analysis of the depth distribution of both stoichiometric and structural changes in the near-surface region (∼750 nm) with a resolution of 50 nm for stoichiometric and 20 nm for structural changes. No decomposition was measured for temperatures up to 800°C. Decomposition in the near-surface region increased rapidly with further increases in temperature, resulting in a near-amorphous region (500 nm) for annealling at 1100°C. We describe the range of annealling conditions under which negligible stoichiometric and structural changes are observed. Our nanoscale resolution results are useful for the fabrication and operation of conventional and nanoscale optoelectronic and high-temperature devices.
Persistent Identifierhttp://hdl.handle.net/10722/155201
ISSN
2015 Impact Factor: 1.444
2015 SCImago Journal Rankings: 0.535
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorRana, MAen_US
dc.contributor.authorOsipowicz, Ten_US
dc.contributor.authorChoi, HWen_US
dc.contributor.authorBreese, MBHen_US
dc.contributor.authorWatt, Fen_US
dc.contributor.authorChua, SJen_US
dc.date.accessioned2012-08-08T08:32:19Z-
dc.date.available2012-08-08T08:32:19Z-
dc.date.issued2003en_US
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2003, v. 77 n. 1, p. 103-108en_US
dc.identifier.issn0947-8396en_US
dc.identifier.urihttp://hdl.handle.net/10722/155201-
dc.description.abstractAnnealling experiments were performed on GaN layers, grown on sapphire, over a wide range of temperatures (500-1100°C). Rutherford Backscattering Spectrometry (RBS) was performed in random and <0001> channelling geometries using 2 MeV protons and helium ions to determine the stoichiometric and structural alterations produced during annealling. We present here, for the first time, a comprehensive and quantitative analysis of the depth distribution of both stoichiometric and structural changes in the near-surface region (∼750 nm) with a resolution of 50 nm for stoichiometric and 20 nm for structural changes. No decomposition was measured for temperatures up to 800°C. Decomposition in the near-surface region increased rapidly with further increases in temperature, resulting in a near-amorphous region (500 nm) for annealling at 1100°C. We describe the range of annealling conditions under which negligible stoichiometric and structural changes are observed. Our nanoscale resolution results are useful for the fabrication and operation of conventional and nanoscale optoelectronic and high-temperature devices.en_US
dc.languageengen_US
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_US
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_US
dc.titleStoichiometric and structural alterations in GaN thin films during anneallingen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1007/s00339-003-2102-zen_US
dc.identifier.scopuseid_2-s2.0-0038271658en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0038271658&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume77en_US
dc.identifier.issue1en_US
dc.identifier.spage103en_US
dc.identifier.epage108en_US
dc.identifier.isiWOS:000183521200014-
dc.publisher.placeGermanyen_US
dc.identifier.scopusauthoridRana, MA=7006672846en_US
dc.identifier.scopusauthoridOsipowicz, T=7005277353en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridBreese, MBH=7005563036en_US
dc.identifier.scopusauthoridWatt, F=7102810624en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US

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