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Article: Improved reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation

TitleImproved reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridation
Authors
KeywordsHigh-field stress
Hot-carrier stress
Low-temperature processing
Nitridation
NO
Plasma
Polysilicon thin-film transistor
Issue Date2003
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 2003, v. 47 n. 8, p. 1391-1395 How to Cite?
AbstractLow-temperature polysilicon thin-film transistors (poly-Si TFTs) fabricated under 600 °C are treated with nitridation using NO plasma. Samples with nitrided gate oxide, nitrided active polysilicon, or both layers nitrided are produced respectively to compare their reliability. It is found that all the nitrided devices demonstrate improved reliability over the control one under both high-field and hot-carrier stresses. Moreover, nitridation on the oxide produces better results under high-field stress while nitridation on the polysilicon is better under hot-carrier stress. The effectiveness of this low-temperature plasma nitridation on TFTs makes the process potentially applicable to the production of high-quality flat-panel displays on glass substrate. © 2003 Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155200
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorOr, DCTen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorSin, JKOen_HK
dc.contributor.authorXu, JPen_HK
dc.date.accessioned2012-08-08T08:32:18Z-
dc.date.available2012-08-08T08:32:18Z-
dc.date.issued2003en_HK
dc.identifier.citationSolid-State Electronics, 2003, v. 47 n. 8, p. 1391-1395en_HK
dc.identifier.issn0038-1101en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155200-
dc.description.abstractLow-temperature polysilicon thin-film transistors (poly-Si TFTs) fabricated under 600 °C are treated with nitridation using NO plasma. Samples with nitrided gate oxide, nitrided active polysilicon, or both layers nitrided are produced respectively to compare their reliability. It is found that all the nitrided devices demonstrate improved reliability over the control one under both high-field and hot-carrier stresses. Moreover, nitridation on the oxide produces better results under high-field stress while nitridation on the polysilicon is better under hot-carrier stress. The effectiveness of this low-temperature plasma nitridation on TFTs makes the process potentially applicable to the production of high-quality flat-panel displays on glass substrate. © 2003 Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_HK
dc.relation.ispartofSolid-State Electronicsen_HK
dc.subjectHigh-field stressen_HK
dc.subjectHot-carrier stressen_HK
dc.subjectLow-temperature processingen_HK
dc.subjectNitridationen_HK
dc.subjectNOen_HK
dc.subjectPlasmaen_HK
dc.subjectPolysilicon thin-film transistoren_HK
dc.titleImproved reliability for gate dielectric of low-temperature polysilicon thin-film transistors by NO-plasma nitridationen_HK
dc.typeArticleen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0038-1101(03)00011-Xen_HK
dc.identifier.scopuseid_2-s2.0-0038249171en_HK
dc.identifier.hkuros90614-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0038249171&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume47en_HK
dc.identifier.issue8en_HK
dc.identifier.spage1391en_HK
dc.identifier.epage1395en_HK
dc.identifier.isiWOS:000183226500018-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridOr, DCT=7006099149en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridSin, JKO=7103312667en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK

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