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Article: High-temperature thermal sensor based on ultra-thin silicon film for ultra-low-power applications

TitleHigh-temperature thermal sensor based on ultra-thin silicon film for ultra-low-power applications
Authors
KeywordsHigh-Temperature Sensors
Silicon-On-Insulator
Thermal Resistor
Issue Date2003
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 2003, v. 47 n. 9, p. 1553-1558 How to Cite?
AbstractA thermal sensor built from a silicon resistor with a simple rectangular layout structure on thin-film (0.1 μm) silicon-on-insulator (SOI) substrate is studied and compared with those on thick-film (10 μm) SOI and bulk (450 μm) Si. Besides supporting the theory of minority-carrier exclusion effect through one-dimensional highly confined carrier transport in the ultra-thin rectangular silicon film, the thin-film SOI device demonstrates the effect of silicon-film thickness on the maximum operating temperature (Tmax) of the sensor: thinner Si film results in higher Tmax due to higher current density and hence stronger exclusion effect. Measurements and simulations both show that the SOI structure can indeed have the silicon-film thickness as an additional degree of freedom for increasing Tmax. More importantly, the thin-film SOI thermal resistor can achieve a Tmax beyond 400 °C even under a very low operating current of 0.1 μA, which is about 1000 times smaller than that of the thick-film SOI counterpart with the same Tmax. In conclusion, silicon resistor on SOI is a promising low-cost thermal sensor for a broad scope of low-power high-temperature applications. © 2003 Published by Elsevier Science Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/155193
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, Ben_US
dc.contributor.authorWu, ZHen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorSin, JKOen_US
dc.contributor.authorLiu, BYen_US
dc.contributor.authorZheng, XRen_US
dc.date.accessioned2012-08-08T08:32:17Z-
dc.date.available2012-08-08T08:32:17Z-
dc.date.issued2003en_US
dc.identifier.citationSolid-State Electronics, 2003, v. 47 n. 9, p. 1553-1558en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/155193-
dc.description.abstractA thermal sensor built from a silicon resistor with a simple rectangular layout structure on thin-film (0.1 μm) silicon-on-insulator (SOI) substrate is studied and compared with those on thick-film (10 μm) SOI and bulk (450 μm) Si. Besides supporting the theory of minority-carrier exclusion effect through one-dimensional highly confined carrier transport in the ultra-thin rectangular silicon film, the thin-film SOI device demonstrates the effect of silicon-film thickness on the maximum operating temperature (Tmax) of the sensor: thinner Si film results in higher Tmax due to higher current density and hence stronger exclusion effect. Measurements and simulations both show that the SOI structure can indeed have the silicon-film thickness as an additional degree of freedom for increasing Tmax. More importantly, the thin-film SOI thermal resistor can achieve a Tmax beyond 400 °C even under a very low operating current of 0.1 μA, which is about 1000 times smaller than that of the thick-film SOI counterpart with the same Tmax. In conclusion, silicon resistor on SOI is a promising low-cost thermal sensor for a broad scope of low-power high-temperature applications. © 2003 Published by Elsevier Science Ltd.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid-State Electronicsen_US
dc.subjectHigh-Temperature Sensorsen_US
dc.subjectSilicon-On-Insulatoren_US
dc.subjectThermal Resistoren_US
dc.titleHigh-temperature thermal sensor based on ultra-thin silicon film for ultra-low-power applicationsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0038-1101(03)00080-7en_US
dc.identifier.scopuseid_2-s2.0-0037732738en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037732738&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume47en_US
dc.identifier.issue9en_US
dc.identifier.spage1553en_US
dc.identifier.epage1558en_US
dc.identifier.isiWOS:000184014700021-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridLi, B=26643217800en_US
dc.identifier.scopusauthoridWu, ZH=7501411463en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridSin, JKO=7103312667en_US
dc.identifier.scopusauthoridLiu, BY=7408690364en_US
dc.identifier.scopusauthoridZheng, XR=7404091424en_US

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