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Article: Study of the origin of luminescence in high indium composition InGaN/GaN quantum wells

TitleStudy of the origin of luminescence in high indium composition InGaN/GaN quantum wells
Authors
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2003, v. 93 n. 8, p. 4691-4695 How to Cite?
AbstractThe emission properties and the origin of photoluminescence in GaN and InGaN quantum wells were discussed. The origin of strong emission was attributed to exciton localization in the quantum dot like regions. The peak position and intensity in the sample in which the quantum dot like regions were abundant in quantum well layers, were not influenced much by the externally applied bias voltage.
Persistent Identifierhttp://hdl.handle.net/10722/155192
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorCheong, MGen_US
dc.contributor.authorLiu, Cen_US
dc.contributor.authorChoi, HWen_US
dc.contributor.authorLee, BKen_US
dc.contributor.authorSuh, EKen_US
dc.contributor.authorLee, HJen_US
dc.date.accessioned2012-08-08T08:32:16Z-
dc.date.available2012-08-08T08:32:16Z-
dc.date.issued2003en_US
dc.identifier.citationJournal Of Applied Physics, 2003, v. 93 n. 8, p. 4691-4695en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155192-
dc.description.abstractThe emission properties and the origin of photoluminescence in GaN and InGaN quantum wells were discussed. The origin of strong emission was attributed to exciton localization in the quantum dot like regions. The peak position and intensity in the sample in which the quantum dot like regions were abundant in quantum well layers, were not influenced much by the externally applied bias voltage.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleStudy of the origin of luminescence in high indium composition InGaN/GaN quantum wellsen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.1562735en_US
dc.identifier.scopuseid_2-s2.0-0037666135en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037666135&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume93en_US
dc.identifier.issue8en_US
dc.identifier.spage4691en_US
dc.identifier.epage4695en_US
dc.identifier.isiWOS:000181863100047-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridCheong, MG=7006837761en_US
dc.identifier.scopusauthoridLiu, C=36064477300en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridLee, BK=7405442688en_US
dc.identifier.scopusauthoridSuh, EK=7101935457en_US
dc.identifier.scopusauthoridLee, HJ=36072331600en_US

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