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Article: Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes

TitleMechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes
Authors
Choi, HWJeon, CWDawson, MDEdwards, PRMartin, RWTripathy, S
Issue Date2003
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2003, v. 93 n. 10, p. 5978-5982 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1567803
AbstractThe investigation of optical and strain-field properties of GaN-based light emitting diodes (LED) with micropillar geometry was done. The examination of mechanism of enhanced light output was done based on electroluminescence (EL), cathodoluminescence (CL), and Raman scattering results. The intense light emission at the periphery of the devices was shown by the optical microscope images, as a result of light scattering off the etched sidewalls.
Persistent Identifierhttp://hdl.handle.net/10722/155191
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:000182789700020
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.contributor.authorJeon, CWen_US
dc.contributor.authorDawson, MDen_US
dc.contributor.authorEdwards, PRen_US
dc.contributor.authorMartin, RWen_US
dc.contributor.authorTripathy, Sen_US
dc.date.accessioned2012-08-08T08:32:16Z-
dc.date.available2012-08-08T08:32:16Z-
dc.date.issued2003en_US
dc.identifier.citationJournal of Applied Physics, 2003, v. 93 n. 10, p. 5978-5982-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155191-
dc.description.abstractThe investigation of optical and strain-field properties of GaN-based light emitting diodes (LED) with micropillar geometry was done. The examination of mechanism of enhanced light output was done based on electroluminescence (EL), cathodoluminescence (CL), and Raman scattering results. The intense light emission at the periphery of the devices was shown by the optical microscope images, as a result of light scattering off the etched sidewalls.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleMechanism of enhanced light output efficiency in InGaN-based microlight emitting diodesen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.1567803en_US
dc.identifier.scopuseid_2-s2.0-0037636578en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037636578&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume93en_US
dc.identifier.issue10-
dc.identifier.spage5978en_US
dc.identifier.epage5982en_US
dc.identifier.isiWOS:000182789700020-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridJeon, CW=7006894315en_US
dc.identifier.scopusauthoridDawson, MD=7203061779en_US
dc.identifier.scopusauthoridEdwards, PR=7401881875en_US
dc.identifier.scopusauthoridMartin, RW=9742683000en_US
dc.identifier.scopusauthoridTripathy, S=8698106400en_US
dc.identifier.issnl0021-8979-

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