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Article: Al/Au and Cu/Au bilayer-metal contacts to YBa2Cu 3O7-x thin films

TitleAl/Au and Cu/Au bilayer-metal contacts to YBa2Cu 3O7-x thin films
Authors
Issue Date1992
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1992, v. 71 n. 8, p. 4082-4084 How to Cite?
AbstractElectrical contact resistivities of both Al and Cu single layer contacts as well as Cu/Au and Al/Au bilayer metal contacts to YBa2Cu 3O7-x (YBCO) thin film have been studied. It was found that aluminum and copper make poor electrical contacts to YBCO due to interface reactions. These contacts have large contact resistivity (10-1-1 Ω cm2), orders of magnitude higher than that of a gold/YBCO contact (10-6 Ω cm2). When an ultrathin Au interlayer (10-30 Å) was inserted between an Al or Cu overlayer and a YBCO film, interface reaction was greatly reduced. The contact resistivities of Al/Au and Cu/Au bilayer-metal contacts dropped by five orders of magnitude when Au interlayer thickness was increased from 0 to 10 Å. With the gold interlayer thickness of 15 Å, the Al/Au and Cu/Au bilayer-metal contacts reached a minimum contact resistivity, approaching that of a thick single-layer Au metal contact.
Persistent Identifierhttp://hdl.handle.net/10722/155190
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMa, QYen_US
dc.contributor.authorSchmidt, MTen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorChan, SWen_US
dc.contributor.authorBhattachayra, Den_US
dc.contributor.authorZheng, JPen_US
dc.contributor.authorKwok, HSen_US
dc.date.accessioned2012-08-08T08:32:16Z-
dc.date.available2012-08-08T08:32:16Z-
dc.date.issued1992en_US
dc.identifier.citationJournal Of Applied Physics, 1992, v. 71 n. 8, p. 4082-4084en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/155190-
dc.description.abstractElectrical contact resistivities of both Al and Cu single layer contacts as well as Cu/Au and Al/Au bilayer metal contacts to YBa2Cu 3O7-x (YBCO) thin film have been studied. It was found that aluminum and copper make poor electrical contacts to YBCO due to interface reactions. These contacts have large contact resistivity (10-1-1 Ω cm2), orders of magnitude higher than that of a gold/YBCO contact (10-6 Ω cm2). When an ultrathin Au interlayer (10-30 Å) was inserted between an Al or Cu overlayer and a YBCO film, interface reaction was greatly reduced. The contact resistivities of Al/Au and Cu/Au bilayer-metal contacts dropped by five orders of magnitude when Au interlayer thickness was increased from 0 to 10 Å. With the gold interlayer thickness of 15 Å, the Al/Au and Cu/Au bilayer-metal contacts reached a minimum contact resistivity, approaching that of a thick single-layer Au metal contact.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleAl/Au and Cu/Au bilayer-metal contacts to YBa2Cu 3O7-x thin filmsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.350834en_US
dc.identifier.scopuseid_2-s2.0-0037618505en_US
dc.identifier.volume71en_US
dc.identifier.issue8en_US
dc.identifier.spage4082en_US
dc.identifier.epage4084en_US
dc.identifier.isiWOS:A1992HP36600065-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridMa, QY=7402815617en_US
dc.identifier.scopusauthoridSchmidt, MT=23016700400en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridChan, SW=7404255242en_US
dc.identifier.scopusauthoridBhattachayra, D=36346697300en_US
dc.identifier.scopusauthoridZheng, JP=7403974939en_US
dc.identifier.scopusauthoridKwok, HS=36071953500en_US

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