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Article: Fabrication and performance of parallel-addressed InGaN micro-LED arrays

TitleFabrication and performance of parallel-addressed InGaN micro-LED arrays
Authors
KeywordsGallium Nitride
Light-Emitting Diode (Led) Arrays
Micro-Light-Emitting Diodes
Issue Date2003
Citation
Ieee Photonics Technology Letters, 2003, v. 15 n. 4, p. 510-512 How to Cite?
AbstractHigh-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12. and 20 μm, respectively, and overall dimensions 490 × 490 μm, have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallization, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have current-voltage (I-V) characteristics approaching those of broad-area reference LEDs fabricated from the same wafer, and give comparable (3-mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.
Persistent Identifierhttp://hdl.handle.net/10722/155186
ISSN
2015 Impact Factor: 1.945
2015 SCImago Journal Rankings: 1.433
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.contributor.authorJeon, CWen_US
dc.contributor.authorDawson, MDen_US
dc.contributor.authorEdwards, PRen_US
dc.contributor.authorMartin, RWen_US
dc.date.accessioned2012-08-08T08:32:14Z-
dc.date.available2012-08-08T08:32:14Z-
dc.date.issued2003en_US
dc.identifier.citationIeee Photonics Technology Letters, 2003, v. 15 n. 4, p. 510-512en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://hdl.handle.net/10722/155186-
dc.description.abstractHigh-performance, two-dimensional arrays of parallel-addressed InGaN blue micro-light-emitting diodes (LEDs) with individual element diameters of 8, 12. and 20 μm, respectively, and overall dimensions 490 × 490 μm, have been fabricated. In order to overcome the difficulty of interconnecting multiple device elements with sufficient step-height coverage for contact metallization, a novel scheme involving the etching of sloped-sidewalls has been developed. The devices have current-voltage (I-V) characteristics approaching those of broad-area reference LEDs fabricated from the same wafer, and give comparable (3-mW) light output in the forward direction to the reference LEDs, despite much lower active area. The external efficiencies of the micro-LED arrays improve as the dimensions of the individual elements are scaled down. This is attributed to scattering at the etched sidewalls of in-plane propagating photons into the forward direction.en_US
dc.languageengen_US
dc.relation.ispartofIEEE Photonics Technology Lettersen_US
dc.subjectGallium Nitrideen_US
dc.subjectLight-Emitting Diode (Led) Arraysen_US
dc.subjectMicro-Light-Emitting Diodesen_US
dc.titleFabrication and performance of parallel-addressed InGaN micro-LED arraysen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/LPT.2003.809257en_US
dc.identifier.scopuseid_2-s2.0-0037389314en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037389314&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume15en_US
dc.identifier.issue4en_US
dc.identifier.spage510en_US
dc.identifier.epage512en_US
dc.identifier.isiWOS:000181868900006-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridJeon, CW=7006894315en_US
dc.identifier.scopusauthoridDawson, MD=7203061779en_US
dc.identifier.scopusauthoridEdwards, PR=7401881875en_US
dc.identifier.scopusauthoridMartin, RW=9742683000en_US

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