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Article: InGaP/GaAs0.94Sb<0.06>/GaAs double heterojunction bipolar transistor

TitleInGaP/GaAs0.94Sb<0.06>/GaAs double heterojunction bipolar transistor
Authors
Issue Date2002
PublisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/EL
Citation
Electronics Letters, 2002, v. 38 n. 6, p. 289-291 How to Cite?
AbstractA novel InGaP/GaAs0.94Sb0.06/GaAs double heterojunction bipolar transistor is presented. It features the use of fully strained pseudomorphic GaAs0.94Sb0.06 as the base layer and an InGaP layer as the emitter, which both eliminate misfit dislocations and current blocking, and increase the valence band discontinuity at the InGaP/GaAsSb interface. The device demonstrates a high current gain and a low turn-on voltage.
Persistent Identifierhttp://hdl.handle.net/10722/155175
ISSN
2015 Impact Factor: 0.854
2015 SCImago Journal Rankings: 0.549
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYan, BPen_US
dc.contributor.authorHsu, CCen_US
dc.contributor.authorWang, XQen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:32:11Z-
dc.date.available2012-08-08T08:32:11Z-
dc.date.issued2002en_US
dc.identifier.citationElectronics Letters, 2002, v. 38 n. 6, p. 289-291en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/10722/155175-
dc.description.abstractA novel InGaP/GaAs0.94Sb0.06/GaAs double heterojunction bipolar transistor is presented. It features the use of fully strained pseudomorphic GaAs0.94Sb0.06 as the base layer and an InGaP layer as the emitter, which both eliminate misfit dislocations and current blocking, and increase the valence band discontinuity at the InGaP/GaAsSb interface. The device demonstrates a high current gain and a low turn-on voltage.en_US
dc.languageengen_US
dc.publisherThe Institution of Engineering and Technology. The Journal's web site is located at http://www.ieedl.org/ELen_US
dc.relation.ispartofElectronics Lettersen_US
dc.titleInGaP/GaAs0.94Sb<0.06>/GaAs double heterojunction bipolar transistoren_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1049/el:20020201en_US
dc.identifier.scopuseid_2-s2.0-0037075614en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037075614&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume38en_US
dc.identifier.issue6en_US
dc.identifier.spage289en_US
dc.identifier.epage291en_US
dc.identifier.isiWOS:000174502500021-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridYan, BP=7201858607en_US
dc.identifier.scopusauthoridHsu, CC=7404947020en_US
dc.identifier.scopusauthoridWang, XQ=7501857054en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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