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Article: Surface analysis of GaN decomposition

TitleSurface analysis of GaN decomposition
Authors
Issue Date2002
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 2002, v. 17 n. 12, p. 1223-1225 How to Cite?
AbstractThe decomposition of GaN at a range of temperatures has been studied by Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The development of a surface defect peak is a consequence of preferential N2 loss at elevated temperatures. Additionally, the emergence of a direct scattering peak approximately 0.25μm beneath the surface at 1100 °C can be attributed to the buildup of extended defects. At such temperatures severe roughening of the surface is observed through AFM scans. Nevertheless, Ga droplet formation is not detected from our samples as verified by XPS. Our results show that GaN remains thermally stable in N2 up to 900 °C. At higher temperatures, significant decomposition occurs and gives rise to degradation of the structural and morphological properties of the film.
Persistent Identifierhttp://hdl.handle.net/10722/155174
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoi, HWen_US
dc.contributor.authorRana, MAen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorOsipowicz, Ten_US
dc.contributor.authorPan, JSen_US
dc.date.accessioned2012-08-08T08:32:11Z-
dc.date.available2012-08-08T08:32:11Z-
dc.date.issued2002en_US
dc.identifier.citationSemiconductor Science And Technology, 2002, v. 17 n. 12, p. 1223-1225en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://hdl.handle.net/10722/155174-
dc.description.abstractThe decomposition of GaN at a range of temperatures has been studied by Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The development of a surface defect peak is a consequence of preferential N2 loss at elevated temperatures. Additionally, the emergence of a direct scattering peak approximately 0.25μm beneath the surface at 1100 °C can be attributed to the buildup of extended defects. At such temperatures severe roughening of the surface is observed through AFM scans. Nevertheless, Ga droplet formation is not detected from our samples as verified by XPS. Our results show that GaN remains thermally stable in N2 up to 900 °C. At higher temperatures, significant decomposition occurs and gives rise to degradation of the structural and morphological properties of the film.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_US
dc.relation.ispartofSemiconductor Science and Technologyen_US
dc.titleSurface analysis of GaN decompositionen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0268-1242/17/12/304en_US
dc.identifier.scopuseid_2-s2.0-0036903688en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036903688&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume17en_US
dc.identifier.issue12en_US
dc.identifier.spage1223en_US
dc.identifier.epage1225en_US
dc.identifier.isiWOS:000180018700004-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridRana, MA=7006672846en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridOsipowicz, T=7005277353en_US
dc.identifier.scopusauthoridPan, JS=7404098334en_US

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