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Article: Vacancy effects on plasma-induced damage to n-type GaN

TitleVacancy effects on plasma-induced damage to n-type GaN
Authors
Issue Date2001
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2001, v. 64 n. 20, p. 2053021-2053025 How to Cite?
AbstractTwo modes of plasma-induced damage to n-type GaN have been identified, giving rise to contrasting changes to the transport properties. The formation of VGa-ON complexes introduces a deep level in the band gap, while V N give rise to a shallow level in n-GaN. We suggest that when VGa are present in abundance in the bulk, vacancy-complex formation becomes the dominant mechanism of plasma damage that results in an increased resistivity. In the absence of VGa, VN created by the plasma process dominates in creating an enhanced surface conductivity region.
Persistent Identifierhttp://hdl.handle.net/10722/155156
ISSN
2001 Impact Factor: 3.07
References

 

DC FieldValueLanguage
dc.contributor.authorChua, SJen_US
dc.contributor.authorChoi, HWen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorLi, Pen_US
dc.date.accessioned2012-08-08T08:32:06Z-
dc.date.available2012-08-08T08:32:06Z-
dc.date.issued2001en_US
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2001, v. 64 n. 20, p. 2053021-2053025en_US
dc.identifier.issn0163-1829en_US
dc.identifier.urihttp://hdl.handle.net/10722/155156-
dc.description.abstractTwo modes of plasma-induced damage to n-type GaN have been identified, giving rise to contrasting changes to the transport properties. The formation of VGa-ON complexes introduces a deep level in the band gap, while V N give rise to a shallow level in n-GaN. We suggest that when VGa are present in abundance in the bulk, vacancy-complex formation becomes the dominant mechanism of plasma damage that results in an increased resistivity. In the absence of VGa, VN created by the plasma process dominates in creating an enhanced surface conductivity region.en_US
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_US
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_US
dc.titleVacancy effects on plasma-induced damage to n-type GaNen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0035890547en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035890547&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume64en_US
dc.identifier.issue20en_US
dc.identifier.spage2053021en_US
dc.identifier.epage2053025en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridZhang, J=16403575100en_US
dc.identifier.scopusauthoridLi, P=26643192100en_US

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