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Conference Paper: Avalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors

TitleAvalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors
Authors
Yan, Bei PingYang, Edward S
Issue Date2000
Citation
Proceedings Of The Ieee Hong Kong Electron Devices Meeting, 2000, p. 122-125 How to Cite?
AbstractThe hole-initiated impact ionization multiplication factor Mp-1 and the ionization coefficient αp in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors are presented. A large departure is observed at low electric field when comparison is made between the measured data and those obtained from avalanche photodiode measurements. The results show that the conventional impact ionization models, based on local electric field, substantially overestimate the hole impact ionization multiplication factor Mp-1 and the hole ionization coefficient in p-n-p heterojunction bipolar transistors where significant dead space effects occur in the collector space charge region.
Persistent Identifierhttp://hdl.handle.net/10722/155137

 

DC FieldValueLanguage
dc.contributor.authorYan, Bei Pingen_US
dc.contributor.authorYang, Edward Sen_US
dc.date.accessioned2012-08-08T08:32:01Z-
dc.date.available2012-08-08T08:32:01Z-
dc.date.issued2000en_US
dc.identifier.citationProceedings Of The Ieee Hong Kong Electron Devices Meeting, 2000, p. 122-125en_US
dc.identifier.urihttp://hdl.handle.net/10722/155137-
dc.description.abstractThe hole-initiated impact ionization multiplication factor Mp-1 and the ionization coefficient αp in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors are presented. A large departure is observed at low electric field when comparison is made between the measured data and those obtained from avalanche photodiode measurements. The results show that the conventional impact ionization models, based on local electric field, substantially overestimate the hole impact ionization multiplication factor Mp-1 and the hole ionization coefficient in p-n-p heterojunction bipolar transistors where significant dead space effects occur in the collector space charge region.en_US
dc.languageengen_US
dc.relation.ispartofProceedings of the IEEE Hong Kong Electron Devices Meetingen_US
dc.titleAvalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistorsen_US
dc.typeConference_Paperen_US
dc.identifier.emailYang, Edward S:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, Edward S=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0034481458en_US
dc.identifier.spage122en_US
dc.identifier.epage125en_US
dc.identifier.scopusauthoridYan, Bei Ping=7201858607en_US
dc.identifier.scopusauthoridYang, Edward S=7202021229en_US

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