File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Tailoring light and heavy holes of GaAsP-AlGaAs quantum wells by using interdiffusion for polarization-independent amplifier applications

TitleTailoring light and heavy holes of GaAsP-AlGaAs quantum wells by using interdiffusion for polarization-independent amplifier applications
Authors
Issue Date2000
Citation
Ieee Journal Of Quantum Electronics, 2000, v. 36 n. 2, p. 164-174 How to Cite?
AbstractA theoretical study of the polarization-independent (PI) optical gain using group III and group V interdiffusion for under- and over-strained GaAsP-AlGaAs quantum wells (QW's), respectively, is presented here. The group III interdiffusion generates a large enough Al concentration into the well of the under-strained QW for providing PI optical gain while this can be achieved in the over-strained QW through the reduction of the P concentration in the well by group V interdiffusion. When the well width increases, the required extent of interdiffusion to obtain PI optical gain increases for the case of group V diffused QW's, but, for the case of group III diffused QW's, the required extent of interdiffusion is not sensitive to the well width. In addition, the introduction of Al in the well layer of QW's can shorten and lengthen the group III and group V interdiffusion, respectively, for providing the PI optical gain. Similar results can also be obtained by increasing the P concentration in the well layer. Consequently, group III and group V interdiffusion can be used to achieve PI optical gain in the under- and over-strained QW's, respectively, for use in PI optical amplifiers. A range of the extent of interdiffusion can be used to obtain the PI gain although the value of the PI gain may reduce. Besides, the operating wavelength can be blue-shifted in group III interdiffusion and red-shifted in group V interdiffusion. Moreover, TE and TM optical gain peaks can be adjusted using interdiffusion for laser applications.
Persistent Identifierhttp://hdl.handle.net/10722/155122
ISSN
2015 Impact Factor: 1.843
2015 SCImago Journal Rankings: 1.128
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCHen_US
dc.date.accessioned2012-08-08T08:31:57Z-
dc.date.available2012-08-08T08:31:57Z-
dc.date.issued2000en_US
dc.identifier.citationIeee Journal Of Quantum Electronics, 2000, v. 36 n. 2, p. 164-174en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://hdl.handle.net/10722/155122-
dc.description.abstractA theoretical study of the polarization-independent (PI) optical gain using group III and group V interdiffusion for under- and over-strained GaAsP-AlGaAs quantum wells (QW's), respectively, is presented here. The group III interdiffusion generates a large enough Al concentration into the well of the under-strained QW for providing PI optical gain while this can be achieved in the over-strained QW through the reduction of the P concentration in the well by group V interdiffusion. When the well width increases, the required extent of interdiffusion to obtain PI optical gain increases for the case of group V diffused QW's, but, for the case of group III diffused QW's, the required extent of interdiffusion is not sensitive to the well width. In addition, the introduction of Al in the well layer of QW's can shorten and lengthen the group III and group V interdiffusion, respectively, for providing the PI optical gain. Similar results can also be obtained by increasing the P concentration in the well layer. Consequently, group III and group V interdiffusion can be used to achieve PI optical gain in the under- and over-strained QW's, respectively, for use in PI optical amplifiers. A range of the extent of interdiffusion can be used to obtain the PI gain although the value of the PI gain may reduce. Besides, the operating wavelength can be blue-shifted in group III interdiffusion and red-shifted in group V interdiffusion. Moreover, TE and TM optical gain peaks can be adjusted using interdiffusion for laser applications.en_US
dc.languageengen_US
dc.relation.ispartofIEEE Journal of Quantum Electronicsen_US
dc.titleTailoring light and heavy holes of GaAsP-AlGaAs quantum wells by using interdiffusion for polarization-independent amplifier applicationsen_US
dc.typeArticleen_US
dc.identifier.emailChoy, WCH:chchoy@eee.hku.hken_US
dc.identifier.authorityChoy, WCH=rp00218en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/3.823462en_US
dc.identifier.scopuseid_2-s2.0-0033882111en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0033882111&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume36en_US
dc.identifier.issue2en_US
dc.identifier.spage164en_US
dc.identifier.epage174en_US
dc.identifier.isiWOS:000085393000008-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoy, WCH=7006202371en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats