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Article: Mechanism of GIDL degradation induced by hot-carrier stresses in n-MOSFETs

TitleMechanism of GIDL degradation induced by hot-carrier stresses in n-MOSFETs
Authors
Issue Date1999
Citation
Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 1999, v. 20 n. 12, p. 1087-1092 How to Cite?
AbstractDegradation in Gate-Induced Drain Leakage (GIDL) of n-MOSFETs with different gate oxides under different hot-carrier stresses is investigated. It has been found that the shift of GIDL is very sensitive to gate voltage and reaches the maximum under a stress with VG=0.5VD. Through 2-D simulation of electrical field and carrier distribution near the drain, and the introduction of sub-interface traps concept, a new insight on the mechanisms involved in GIDL shift is proposed, i.e. sub-interface and bulk-oxide hole detrappings during stressing are responsible for the respective GIDL shifts under two typical stresses of VG=0.5VD and VG=VD. Furthermore, it is observed that N2O-nitrided and especially N2O-annealed NH3nitrided n-MOSFETs have much smaller GIDL shift as compared with conventional thermally-oxidized n-MOSFETs, indicating considerably suppressed subinterface and bulk-oxide hole traps in these oxynitrides.
Persistent Identifierhttp://hdl.handle.net/10722/155115
ISSN
2011 SCImago Journal Rankings: 0.140

 

DC FieldValueLanguage
dc.contributor.authorXu, Jingpingen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2012-08-08T08:31:55Z-
dc.date.available2012-08-08T08:31:55Z-
dc.date.issued1999en_HK
dc.identifier.citationPan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 1999, v. 20 n. 12, p. 1087-1092en_HK
dc.identifier.issn0253-4177en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155115-
dc.description.abstractDegradation in Gate-Induced Drain Leakage (GIDL) of n-MOSFETs with different gate oxides under different hot-carrier stresses is investigated. It has been found that the shift of GIDL is very sensitive to gate voltage and reaches the maximum under a stress with VG=0.5VD. Through 2-D simulation of electrical field and carrier distribution near the drain, and the introduction of sub-interface traps concept, a new insight on the mechanisms involved in GIDL shift is proposed, i.e. sub-interface and bulk-oxide hole detrappings during stressing are responsible for the respective GIDL shifts under two typical stresses of VG=0.5VD and VG=VD. Furthermore, it is observed that N2O-nitrided and especially N2O-annealed NH3nitrided n-MOSFETs have much smaller GIDL shift as compared with conventional thermally-oxidized n-MOSFETs, indicating considerably suppressed subinterface and bulk-oxide hole traps in these oxynitrides.en_HK
dc.languageengen_US
dc.relation.ispartofPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductorsen_HK
dc.titleMechanism of GIDL degradation induced by hot-carrier stresses in n-MOSFETsen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, Jingping: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, Jingping=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0033293406en_HK
dc.identifier.volume20en_HK
dc.identifier.issue12en_HK
dc.identifier.spage1087en_HK
dc.identifier.epage1092en_HK
dc.publisher.placeChinaen_HK
dc.identifier.scopusauthoridXu, Jingping=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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