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Article: Polarization insensitive electro-absorption and gain-switching quantum-well modulators using interdiffusion

TitlePolarization insensitive electro-absorption and gain-switching quantum-well modulators using interdiffusion
Authors
Issue Date1999
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 1999, v. 3666, p. 282-285 How to Cite?
AbstractA theoretical study of the polarization independent quantum-well gain using interdiffusion is presented here. Group V sublattice interdiffusion in InGaAs/InP quantum wells is used to produce polarization independent optical gain. The reverse bias and carrier effects on the subband structures, transition energy and optical gain of the interdiffused quantum well are discussed. The interdiffused quantum well structures are optimized in terms of their subband structure, carrier density, structural parameters and properties of optical gain spectra. The results show that an optimized interdiffused quantum well structure can produce polarization independent optical gain over a range of operation wavelengths around 1.5 μm, although the differential gain and linewidth enhancement factor are slightly degraded. The required tensile strain for the polarization independence of a lattice-matched quantum well structure is generated here using interdiffusion. These results suggest that polarization independent optical devices can be fabricated using interdiffusion using a lattice-matched InGaAsP quantum well structure.
Persistent Identifierhttp://hdl.handle.net/10722/155108
ISSN

 

DC FieldValueLanguage
dc.contributor.authorChoy, Wallace CHen_US
dc.contributor.authorLi, EHerberten_US
dc.contributor.authorWeiss, Bernard Len_US
dc.date.accessioned2012-08-08T08:31:53Z-
dc.date.available2012-08-08T08:31:53Z-
dc.date.issued1999en_US
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 1999, v. 3666, p. 282-285en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/155108-
dc.description.abstractA theoretical study of the polarization independent quantum-well gain using interdiffusion is presented here. Group V sublattice interdiffusion in InGaAs/InP quantum wells is used to produce polarization independent optical gain. The reverse bias and carrier effects on the subband structures, transition energy and optical gain of the interdiffused quantum well are discussed. The interdiffused quantum well structures are optimized in terms of their subband structure, carrier density, structural parameters and properties of optical gain spectra. The results show that an optimized interdiffused quantum well structure can produce polarization independent optical gain over a range of operation wavelengths around 1.5 μm, although the differential gain and linewidth enhancement factor are slightly degraded. The required tensile strain for the polarization independence of a lattice-matched quantum well structure is generated here using interdiffusion. These results suggest that polarization independent optical devices can be fabricated using interdiffusion using a lattice-matched InGaAsP quantum well structure.en_US
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_US
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.titlePolarization insensitive electro-absorption and gain-switching quantum-well modulators using interdiffusionen_US
dc.typeArticleen_US
dc.identifier.emailChoy, Wallace CH:chchoy@eee.hku.hken_US
dc.identifier.authorityChoy, Wallace CH=rp00218en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0032674906en_US
dc.identifier.volume3666en_US
dc.identifier.spage282en_US
dc.identifier.epage285en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoy, Wallace CH=7006202371en_US
dc.identifier.scopusauthoridLi, EHerbert=7201410087en_US
dc.identifier.scopusauthoridWeiss, Bernard L=7402309717en_US

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