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Article: Moisture sensitive field effect transistors using SiO2/Si3N4/Al2O3 gate structure

TitleMoisture sensitive field effect transistors using SiO2/Si3N4/Al2O3 gate structure
Authors
Issue Date1999
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sms
Citation
Smart Materials And Structures, 1999, v. 8 n. 2, p. 274-277 How to Cite?
AbstractA humidity sensing device, named a moisture sensitive field effect transistor (HUMIFET) has been fabricated on an n-type Si wafer using conventional VLSI technology. A series of sensors, each having area approximately 3.0 mm2 have been designed on a single Si wafer. The FET device is an n-channel MISFET with a duplex gate structure. A humidity sensitive layer of an anodically oxidized film of Al covers the under-gate electrode area and serves as a humidity sensitive film. The structure of the HUMIFET is Si/SiO2/Si3N4/Al2O3 and a thin porous gold (Au) layer on Al2O3 acts as the upper gate electrode. The device shows an enhancement mode characteristics with a threshold voltage of approximately 2.9 V at 33% relative humidity (RH) level which increases with decreasing RH level. The capacitance of the sensing film is measured and its temperature dependence is also observed. The drain current of the device is measured with RH at constant gate and drain voltages and the hysteresis area is found. The sensitivity of the device is 4.8 μA/RH for the whole range of RH levels at constant gate and drain voltages. During a one month study on reproducibility, the device is found to be very stable. The response and recovery times of the device are approximately 6 and approximately 8 s respectively.
Persistent Identifierhttp://hdl.handle.net/10722/155106
ISSN
2015 Impact Factor: 2.769
2015 SCImago Journal Rankings: 1.171
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChakraborty, Sen_US
dc.contributor.authorNemoto, Ken_US
dc.contributor.authorHara, Ken_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:31:53Z-
dc.date.available2012-08-08T08:31:53Z-
dc.date.issued1999en_US
dc.identifier.citationSmart Materials And Structures, 1999, v. 8 n. 2, p. 274-277en_US
dc.identifier.issn0964-1726en_US
dc.identifier.urihttp://hdl.handle.net/10722/155106-
dc.description.abstractA humidity sensing device, named a moisture sensitive field effect transistor (HUMIFET) has been fabricated on an n-type Si wafer using conventional VLSI technology. A series of sensors, each having area approximately 3.0 mm2 have been designed on a single Si wafer. The FET device is an n-channel MISFET with a duplex gate structure. A humidity sensitive layer of an anodically oxidized film of Al covers the under-gate electrode area and serves as a humidity sensitive film. The structure of the HUMIFET is Si/SiO2/Si3N4/Al2O3 and a thin porous gold (Au) layer on Al2O3 acts as the upper gate electrode. The device shows an enhancement mode characteristics with a threshold voltage of approximately 2.9 V at 33% relative humidity (RH) level which increases with decreasing RH level. The capacitance of the sensing film is measured and its temperature dependence is also observed. The drain current of the device is measured with RH at constant gate and drain voltages and the hysteresis area is found. The sensitivity of the device is 4.8 μA/RH for the whole range of RH levels at constant gate and drain voltages. During a one month study on reproducibility, the device is found to be very stable. The response and recovery times of the device are approximately 6 and approximately 8 s respectively.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/smsen_US
dc.relation.ispartofSmart Materials and Structuresen_US
dc.titleMoisture sensitive field effect transistors using SiO2/Si3N4/Al2O3 gate structureen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0964-1726/8/2/014en_US
dc.identifier.scopuseid_2-s2.0-0032668302en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032668302&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume8en_US
dc.identifier.issue2en_US
dc.identifier.spage274en_US
dc.identifier.epage277en_US
dc.identifier.isiWOS:000080049400014-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridChakraborty, S=35577738500en_US
dc.identifier.scopusauthoridNemoto, K=7201791270en_US
dc.identifier.scopusauthoridHara, K=36019221400en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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