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Article: New thin-film humidity and thermal micro-sensor with Al/SrNbxTi1-xO3/SiO2/Si structure

TitleNew thin-film humidity and thermal micro-sensor with Al/SrNbxTi1-xO3/SiO2/Si structure
Authors
Issue Date1999
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
Citation
Sensors And Actuators, A: Physical, 1999, v. 75 n. 1, p. 70-74 How to Cite?
AbstractStrontium titanate-niobate (SrNbxTi1-xO3) film deposited on a SiO2/Si substrate by the argon ion-beam sputtering technique is used to fabricate thin-film resistors and metal-insulator-semiconductor (MIS) capacitors by standard integrated-circuit technology. Results show that the film resistor has superior thermal-sensitivity characteristics within the temperature range of 27-200 °C, and the MIS capacitor is highly sensitive to relative humidity. Besides investigating the effects of frequency on the impedance of the film resistor at various temperatures and on the current of the MIS capacitor at low and high relative humidities, the response times of the MIS capacitor to adsorption and desorption of water vapor are found to be reasonably short (15 s and 10 s) and its humidity hysteresis can be greatly suppressed at higher operating voltages.
Persistent Identifierhttp://hdl.handle.net/10722/155104
ISSN
2015 Impact Factor: 2.201
2015 SCImago Journal Rankings: 0.902
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, GQen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorZeng, SHen_US
dc.contributor.authorHuang, MQen_US
dc.contributor.authorLi, Ben_US
dc.date.accessioned2012-08-08T08:31:53Z-
dc.date.available2012-08-08T08:31:53Z-
dc.date.issued1999en_US
dc.identifier.citationSensors And Actuators, A: Physical, 1999, v. 75 n. 1, p. 70-74en_US
dc.identifier.issn0924-4247en_US
dc.identifier.urihttp://hdl.handle.net/10722/155104-
dc.description.abstractStrontium titanate-niobate (SrNbxTi1-xO3) film deposited on a SiO2/Si substrate by the argon ion-beam sputtering technique is used to fabricate thin-film resistors and metal-insulator-semiconductor (MIS) capacitors by standard integrated-circuit technology. Results show that the film resistor has superior thermal-sensitivity characteristics within the temperature range of 27-200 °C, and the MIS capacitor is highly sensitive to relative humidity. Besides investigating the effects of frequency on the impedance of the film resistor at various temperatures and on the current of the MIS capacitor at low and high relative humidities, the response times of the MIS capacitor to adsorption and desorption of water vapor are found to be reasonably short (15 s and 10 s) and its humidity hysteresis can be greatly suppressed at higher operating voltages.en_US
dc.languageengen_US
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/snaen_US
dc.relation.ispartofSensors and Actuators, A: Physicalen_US
dc.titleNew thin-film humidity and thermal micro-sensor with Al/SrNbxTi1-xO3/SiO2/Si structureen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0924-4247(99)00052-7en_US
dc.identifier.scopuseid_2-s2.0-0032665839en_US
dc.identifier.hkuros44797-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032665839&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume75en_US
dc.identifier.issue1en_US
dc.identifier.spage70en_US
dc.identifier.epage74en_US
dc.identifier.isiWOS:000080249700011-
dc.publisher.placeSwitzerlanden_US
dc.identifier.scopusauthoridLi, GQ=7407050307en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridZeng, SH=7202412592en_US
dc.identifier.scopusauthoridHuang, MQ=7404259759en_US
dc.identifier.scopusauthoridLi, B=26643217800en_US

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