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Article: Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

TitleMechanism analysis of gate-induced drain leakage in off-state n-MOSFET
Authors
Issue Date1998
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrel
Citation
Microelectronics Reliability, 1998, v. 38 n. 9, p. 1425-1431 How to Cite?
AbstractAn analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole-Frenkle emission dominates over tunneling for temperatures even well below room temperature. © 1998 Elsevier Science Ltd. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/155078
ISSN
2015 Impact Factor: 1.202
2015 SCImago Journal Rankings: 0.675
References

 

DC FieldValueLanguage
dc.contributor.authorHuang, Len_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2012-08-08T08:31:46Z-
dc.date.available2012-08-08T08:31:46Z-
dc.date.issued1998en_HK
dc.identifier.citationMicroelectronics Reliability, 1998, v. 38 n. 9, p. 1425-1431en_HK
dc.identifier.issn0026-2714en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155078-
dc.description.abstractAn analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole-Frenkle emission dominates over tunneling for temperatures even well below room temperature. © 1998 Elsevier Science Ltd. All rights reserved.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/microrelen_HK
dc.relation.ispartofMicroelectronics Reliabilityen_HK
dc.titleMechanism analysis of gate-induced drain leakage in off-state n-MOSFETen_HK
dc.typeArticleen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0032157676en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032157676&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume38en_HK
dc.identifier.issue9en_HK
dc.identifier.spage1425en_HK
dc.identifier.epage1431en_HK
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridHuang, L=35205328500en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK

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