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Article: Characterization of flicker noise in N2O and NH3 nitrided MOSFETs due to low-energy Ar+ backsurface gettering

TitleCharacterization of flicker noise in N2O and NH3 nitrided MOSFETs due to low-energy Ar+ backsurface gettering
Authors
Issue Date1998
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 1998, v. 13 n. 7, p. 792-795 How to Cite?
AbstractNitridation of gate dielectric in n-channel Si-MOSFETs was performed by rapid thermal annealing in either NH3 or N2O. Following the nitridation process the devices were subjected to low-energy Ar+ gettering at 550 eV. The gettering time ranged from 10 to 40 minutes. Flicker noise across the conduction channels was characterized over a wide range of temperatures and biases. It was found that flicker noise was reduced by backsurface gettering for short gettering times for both types of device Rebounds in the noise magnitudes are observed for long gettering times. Investigation of the temperature dependences of the noise power spectra indicates that the low-frequency noise originated from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering led to modifications in the energy distribution of the interface traps. The phenomenon is attributed to stress relaxation at the Si-SiO2 interface. Our data show that short gettering times resulted in reductions in the Si-SiO2 interface states and long gettering times led to increases in the concentration of the interface states.
Persistent Identifierhttp://hdl.handle.net/10722/155073
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorSurya, Cen_US
dc.contributor.authorWang, Wen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:31:45Z-
dc.date.available2012-08-08T08:31:45Z-
dc.date.issued1998en_US
dc.identifier.citationSemiconductor Science And Technology, 1998, v. 13 n. 7, p. 792-795en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://hdl.handle.net/10722/155073-
dc.description.abstractNitridation of gate dielectric in n-channel Si-MOSFETs was performed by rapid thermal annealing in either NH3 or N2O. Following the nitridation process the devices were subjected to low-energy Ar+ gettering at 550 eV. The gettering time ranged from 10 to 40 minutes. Flicker noise across the conduction channels was characterized over a wide range of temperatures and biases. It was found that flicker noise was reduced by backsurface gettering for short gettering times for both types of device Rebounds in the noise magnitudes are observed for long gettering times. Investigation of the temperature dependences of the noise power spectra indicates that the low-frequency noise originated from thermal activation of carriers to traps at the Si-SiO2 interface. Backsurface gettering led to modifications in the energy distribution of the interface traps. The phenomenon is attributed to stress relaxation at the Si-SiO2 interface. Our data show that short gettering times resulted in reductions in the Si-SiO2 interface states and long gettering times led to increases in the concentration of the interface states.en_US
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_US
dc.relation.ispartofSemiconductor Science and Technologyen_US
dc.titleCharacterization of flicker noise in N2O and NH3 nitrided MOSFETs due to low-energy Ar+ backsurface getteringen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0268-1242/13/7/023en_US
dc.identifier.scopuseid_2-s2.0-0032116392en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032116392&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume13en_US
dc.identifier.issue7en_US
dc.identifier.spage792en_US
dc.identifier.epage795en_US
dc.identifier.isiWOS:000074823100021-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridSurya, C=7003939256en_US
dc.identifier.scopusauthoridWang, W=7501758811en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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