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Article: Photo-, thermal and humidity sensitivity characteristics of sr1-xLaxTiO3 film on SiO2/Si substrate

TitlePhoto-, thermal and humidity sensitivity characteristics of sr1-xLaxTiO3 film on SiO2/Si substrate
Authors
KeywordsHumidity Sensitivity
Photosensitivity
Sr1-Xlaxtio3 Thin Films
Thermal Sensitivity
Issue Date1997
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
Citation
Sensors And Actuators, A: Physical, 1997, v. 63 n. 3, p. 223-226 How to Cite?
AbstractStrontium lanthanum titanate (Sr1-xLaxTiO3) film deposited on a SiO2/Si substrate by the argon ion-beam sputtering technique has been used to fabricate a thin-film resistor and a metal-insulator-semiconductor (MIS) capacitor by standard integrated-circuit technology. Measurements show that the film resistor has superior sensitivity for visible light and a thermal sensitivity within the range 28-200°C, while the MIS capacitor is highly sensitive to relative humidity. The optical absorption spectrum of the film has been measured and the bandgap of the film determined. The effects of test frequency on the impedance of the film resistor at various temperatures and on the humidity-sensitive characteristics of the MIS capacitor have been investigated. © 1997 Elsevier Science S.A.
Persistent Identifierhttp://hdl.handle.net/10722/155060
ISSN
2015 Impact Factor: 2.201
2015 SCImago Journal Rankings: 0.902
References

 

DC FieldValueLanguage
dc.contributor.authorLi, GQen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorZeng, SHen_US
dc.contributor.authorHuang, MQen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:31:42Z-
dc.date.available2012-08-08T08:31:42Z-
dc.date.issued1997en_US
dc.identifier.citationSensors And Actuators, A: Physical, 1997, v. 63 n. 3, p. 223-226en_US
dc.identifier.issn0924-4247en_US
dc.identifier.urihttp://hdl.handle.net/10722/155060-
dc.description.abstractStrontium lanthanum titanate (Sr1-xLaxTiO3) film deposited on a SiO2/Si substrate by the argon ion-beam sputtering technique has been used to fabricate a thin-film resistor and a metal-insulator-semiconductor (MIS) capacitor by standard integrated-circuit technology. Measurements show that the film resistor has superior sensitivity for visible light and a thermal sensitivity within the range 28-200°C, while the MIS capacitor is highly sensitive to relative humidity. The optical absorption spectrum of the film has been measured and the bandgap of the film determined. The effects of test frequency on the impedance of the film resistor at various temperatures and on the humidity-sensitive characteristics of the MIS capacitor have been investigated. © 1997 Elsevier Science S.A.en_US
dc.languageengen_US
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/snaen_US
dc.relation.ispartofSensors and Actuators, A: Physicalen_US
dc.subjectHumidity Sensitivityen_US
dc.subjectPhotosensitivityen_US
dc.subjectSr1-Xlaxtio3 Thin Filmsen_US
dc.subjectThermal Sensitivityen_US
dc.titlePhoto-, thermal and humidity sensitivity characteristics of sr1-xLaxTiO3 film on SiO2/Si substrateen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031340541en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031340541&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume63en_US
dc.identifier.issue3en_US
dc.identifier.spage223en_US
dc.identifier.epage226en_US
dc.publisher.placeSwitzerlanden_US
dc.identifier.scopusauthoridLi, GQ=7407050307en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridZeng, SH=7202412592en_US
dc.identifier.scopusauthoridHuang, MQ=7404259759en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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