File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: An integrated PVDF ultrasonic sensor with improved sensitivity using polyimide

TitleAn integrated PVDF ultrasonic sensor with improved sensitivity using polyimide
Authors
KeywordsIntegrated Sensors
Polyimide
Ultrasonic Transducers
Issue Date1997
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/sna
Citation
Sensors And Actuators, A: Physical, 1997, v. 63 n. 2, p. 147-152 How to Cite?
AbstractThis paper presents an integrated ultrasonic transducer structure with improved sensitivity which contains a MOSFET-BJT (bipolarjunction transistor) sense amplifier. The extended-gate electrode of the MOSFET is placed over an epitaxial layer isolated from a silicon substrate and is padded up with a polyimide (PI) dielectric layer, which significantly reduces the extended-gate capacitance and therefore increases the sensor sensitivity. The effects of PI preparation conditions on the resulting film are examined. The frequency response of the sense circuit and the impulse response of the proposed structure used as a receiver are tested. With a 5.2 μm thick PI layer, a sensitivity improvement of over 13 dB is achieved when compared with the normal transducer structure. These results match the predictions of voltage-transfer analysis and circuit simulation. © 1997 Elsevier Science S.A.
Persistent Identifierhttp://hdl.handle.net/10722/155058
ISSN
2015 Impact Factor: 2.201
2015 SCImago Journal Rankings: 0.902
References

 

DC FieldValueLanguage
dc.contributor.authorZheng, XRen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLiu, BYen_US
dc.contributor.authorLi, Ben_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:31:41Z-
dc.date.available2012-08-08T08:31:41Z-
dc.date.issued1997en_US
dc.identifier.citationSensors And Actuators, A: Physical, 1997, v. 63 n. 2, p. 147-152en_US
dc.identifier.issn0924-4247en_US
dc.identifier.urihttp://hdl.handle.net/10722/155058-
dc.description.abstractThis paper presents an integrated ultrasonic transducer structure with improved sensitivity which contains a MOSFET-BJT (bipolarjunction transistor) sense amplifier. The extended-gate electrode of the MOSFET is placed over an epitaxial layer isolated from a silicon substrate and is padded up with a polyimide (PI) dielectric layer, which significantly reduces the extended-gate capacitance and therefore increases the sensor sensitivity. The effects of PI preparation conditions on the resulting film are examined. The frequency response of the sense circuit and the impulse response of the proposed structure used as a receiver are tested. With a 5.2 μm thick PI layer, a sensitivity improvement of over 13 dB is achieved when compared with the normal transducer structure. These results match the predictions of voltage-transfer analysis and circuit simulation. © 1997 Elsevier Science S.A.en_US
dc.languageengen_US
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/snaen_US
dc.relation.ispartofSensors and Actuators, A: Physicalen_US
dc.subjectIntegrated Sensorsen_US
dc.subjectPolyimideen_US
dc.subjectUltrasonic Transducersen_US
dc.titleAn integrated PVDF ultrasonic sensor with improved sensitivity using polyimideen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031257837en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031257837&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume63en_US
dc.identifier.issue2en_US
dc.identifier.spage147en_US
dc.identifier.epage152en_US
dc.publisher.placeSwitzerlanden_US
dc.identifier.scopusauthoridZheng, XR=7404091424en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridLiu, BY=7408690364en_US
dc.identifier.scopusauthoridLi, B=26643217800en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats