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Article: New observation and improvement in GIDL of n-MOSFETs with various kinds of N2O-based gate oxides under hot-carrier stress

TitleNew observation and improvement in GIDL of n-MOSFETs with various kinds of N2O-based gate oxides under hot-carrier stress
Authors
Lai, PTXu, JZeng, XCheng, YC
Issue Date1996
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 1996, v. 39 n. 11, p. 1549-1552 How to Cite?
DOI: http://dx.doi.org/10.1016/0038-1101(96)00093-7
AbstractDegradation in gate-induced drain leakage (GIDL) of n-MOSFETs with various kinds of gate oxides under hot-carrier stress at different gate voltages is investigated. It has been found that the shift of GIDL current is very sensitive to gate voltage and is maximum under a stress with VG = 0.5 VD even for a short stress time. This might result from hot electrons captured by fast acceptor-like interface states. A new technique of N2O treatment on NH3-nitrided oxide is also used to prepare the gate oxide and the corresponding MOSFETs show greatly suppressed degradation of GIDL current under hot-carrier stress due to the considerably improved quality of both the gate oxide and Si/SiO2 interface by the N2O treatment. Copyright © 1996 Elsevier Science Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/155045
ISSN
0038-1101
2023 Impact Factor: 1.4
2023 SCImago Journal Rankings: 0.348
ISI Accession Number ID
WOS:A1996VV10600003
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_US
dc.contributor.authorXu, Jen_US
dc.contributor.authorZeng, Xen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:31:38Z-
dc.date.available2012-08-08T08:31:38Z-
dc.date.issued1996en_US
dc.identifier.citationSolid-State Electronics, 1996, v. 39 n. 11, p. 1549-1552en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/155045-
dc.description.abstractDegradation in gate-induced drain leakage (GIDL) of n-MOSFETs with various kinds of gate oxides under hot-carrier stress at different gate voltages is investigated. It has been found that the shift of GIDL current is very sensitive to gate voltage and is maximum under a stress with VG = 0.5 VD even for a short stress time. This might result from hot electrons captured by fast acceptor-like interface states. A new technique of N2O treatment on NH3-nitrided oxide is also used to prepare the gate oxide and the corresponding MOSFETs show greatly suppressed degradation of GIDL current under hot-carrier stress due to the considerably improved quality of both the gate oxide and Si/SiO2 interface by the N2O treatment. Copyright © 1996 Elsevier Science Ltd.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid-State Electronicsen_US
dc.titleNew observation and improvement in GIDL of n-MOSFETs with various kinds of N2O-based gate oxides under hot-carrier stressen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/0038-1101(96)00093-7en_US
dc.identifier.scopuseid_2-s2.0-0030291015en_US
dc.identifier.hkuros26223-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0030291015&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume39en_US
dc.identifier.issue11en_US
dc.identifier.spage1549en_US
dc.identifier.epage1552en_US
dc.identifier.isiWOS:A1996VV10600003-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridJingping, X=6507961065en_US
dc.identifier.scopusauthoridZeng, X=7403248314en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US
dc.identifier.issnl0038-1101-

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