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Article: High performance Fabry-Perot modulator using interdiffused AlGaAs/GaAs quantum wells

TitleHigh performance Fabry-Perot modulator using interdiffused AlGaAs/GaAs quantum wells
Authors
Li, Herbert EChoy, Wallace CH
Issue Date1996
PublisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htm
Citation
Japanese Journal Of Applied Physics, Part 2: Letters, 1996, v. 35 n. 4 B, p. L496-L498 How to Cite?
AbstractInterdiffused AlGaAs/GaAs quantum well structures are being employed as an active material in the Fabry-Perot reflection type modulators. An extremely large relative reflectance change (over 14000) is predicted, higher than any value that has been reported among the available literature today. This is due to an extremely low reflectance (approx. 10-5) at the resonance of the Fabry-Perot mode while simultaneously the change of reflectance is kept around the order of unity. The power consumption is reduced by 67% due to the highly sensitive electrons in the interdiffused wells. A wide operation wavelength range of over 100 nm is also observed.
Persistent Identifierhttp://hdl.handle.net/10722/155037
ISSN
0021-4922
2023 Impact Factor: 1.5
2023 SCImago Journal Rankings: 0.307
ISI Accession Number ID
WOS:A1996UM42200011

 

DC FieldValueLanguage
dc.contributor.authorLi, Herbert Een_US
dc.contributor.authorChoy, Wallace CHen_US
dc.date.accessioned2012-08-08T08:31:36Z-
dc.date.available2012-08-08T08:31:36Z-
dc.date.issued1996en_US
dc.identifier.citationJapanese Journal Of Applied Physics, Part 2: Letters, 1996, v. 35 n. 4 B, p. L496-L498en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/10722/155037-
dc.description.abstractInterdiffused AlGaAs/GaAs quantum well structures are being employed as an active material in the Fabry-Perot reflection type modulators. An extremely large relative reflectance change (over 14000) is predicted, higher than any value that has been reported among the available literature today. This is due to an extremely low reflectance (approx. 10-5) at the resonance of the Fabry-Perot mode while simultaneously the change of reflectance is kept around the order of unity. The power consumption is reduced by 67% due to the highly sensitive electrons in the interdiffused wells. A wide operation wavelength range of over 100 nm is also observed.en_US
dc.languageengen_US
dc.publisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htmen_US
dc.relation.ispartofJapanese Journal of Applied Physics, Part 2: Lettersen_US
dc.titleHigh performance Fabry-Perot modulator using interdiffused AlGaAs/GaAs quantum wellsen_US
dc.typeArticleen_US
dc.identifier.emailChoy, Wallace CH:chchoy@eee.hku.hken_US
dc.identifier.authorityChoy, Wallace CH=rp00218en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0030125184en_US
dc.identifier.volume35en_US
dc.identifier.issue4 Ben_US
dc.identifier.spageL496en_US
dc.identifier.epageL498en_US
dc.identifier.isiWOS:A1996UM42200011-
dc.publisher.placeJapanen_US
dc.identifier.scopusauthoridLi, Herbert E=37085850000en_US
dc.identifier.scopusauthoridChoy, Wallace CH=7006202371en_US
dc.identifier.issnl0021-4922-

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