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Conference Paper: Modification of epitaxial oxide films with ion implantation

TitleModification of epitaxial oxide films with ion implantation
Authors
Issue Date1996
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium - Proceedings, 1996, v. 401, p. 309-314 How to Cite?
AbstractIon implantation is used to modify the properties of oxide (YBCO and YSZ) thin films. Both superconducting and dielectric epitaxial oxide films, grown by laser ablation, are studied. The properties of the implanted oxide films are characterized by SIMS, XPS, DC resistivity and AC susceptibility measurements. By introducing reactive ions into superconducting oxide films, the conductivity of the material is inhibited possibly due to the interaction of the implanted ions with oxygen originally bound to the copper atoms. Al, Si, Ag and Ca ions are implanted into epitaxial YBCO films with injection energies ranging from 50 - 100 KeV and doses ranging from 1×1015 - 1×1016/cm2. XPS analysis shows that the implanted Si ions form SiOx. The inhibition method has been applied to the fabrication of superconducting electronic devices, such as SQUIDs. Dielectric oxide films are doped by the implantation of conductive and non-conductive ions. YSZ films are doped with Ag and Si ions and the ions are found to increase the conductivity.
Persistent Identifierhttp://hdl.handle.net/10722/155034
ISSN

 

DC FieldValueLanguage
dc.contributor.authorHong, SHen_US
dc.contributor.authorMiller, JRen_US
dc.contributor.authorMa, QYen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorFenner, DBen_US
dc.contributor.authorYang, CYen_US
dc.contributor.authorBudnick, JIen_US
dc.date.accessioned2012-08-08T08:31:36Z-
dc.date.available2012-08-08T08:31:36Z-
dc.date.issued1996en_US
dc.identifier.citationMaterials Research Society Symposium - Proceedings, 1996, v. 401, p. 309-314en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/10722/155034-
dc.description.abstractIon implantation is used to modify the properties of oxide (YBCO and YSZ) thin films. Both superconducting and dielectric epitaxial oxide films, grown by laser ablation, are studied. The properties of the implanted oxide films are characterized by SIMS, XPS, DC resistivity and AC susceptibility measurements. By introducing reactive ions into superconducting oxide films, the conductivity of the material is inhibited possibly due to the interaction of the implanted ions with oxygen originally bound to the copper atoms. Al, Si, Ag and Ca ions are implanted into epitaxial YBCO films with injection energies ranging from 50 - 100 KeV and doses ranging from 1×1015 - 1×1016/cm2. XPS analysis shows that the implanted Si ions form SiOx. The inhibition method has been applied to the fabrication of superconducting electronic devices, such as SQUIDs. Dielectric oxide films are doped by the implantation of conductive and non-conductive ions. YSZ films are doped with Ag and Si ions and the ions are found to increase the conductivity.en_US
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_US
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_US
dc.titleModification of epitaxial oxide films with ion implantationen_US
dc.typeConference_Paperen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0029733866en_US
dc.identifier.volume401en_US
dc.identifier.spage309en_US
dc.identifier.epage314en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridHong, SH=34770018100en_US
dc.identifier.scopusauthoridMiller, JR=37023902300en_US
dc.identifier.scopusauthoridMa, QY=7402815617en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridFenner, DB=7006551234en_US
dc.identifier.scopusauthoridYang, CY=7407026289en_US
dc.identifier.scopusauthoridBudnick, JI=7006858731en_US

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