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Article: Laser-induced etching of silicon

TitleLaser-induced etching of silicon
Authors
Keywords78.65
81.60.Cp
82.50
Issue Date1995
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A Materials Science & Processing, 1995, v. 61 n. 1, p. 45-50 How to Cite?
AbstractConventional fabrication method of porous silicon is anodisation of single crystal silicon in hydrofluoric acid. In this report, we show that it is possible to fabricate porous silicon by laser-induced etching. An earlier report by us has demonstrated the dependence of porous silicon photoluminescence characteristic on the etching laser wavelength [1]. Here we used 780 nm line from a diode laser as the etching source, and the optimum etching conditions were obtained. A simple model was proposed to explain the etching process. Scanning Electron Microscope (SEM) images of the samples support the proposed process. © 1995 Springer-Verlag.
Persistent Identifierhttp://hdl.handle.net/10722/155023
ISSN
2015 Impact Factor: 1.444
2015 SCImago Journal Rankings: 0.535

 

DC FieldValueLanguage
dc.contributor.authorChoy, CHen_US
dc.contributor.authorCheah, KWen_US
dc.date.accessioned2012-08-08T08:31:33Z-
dc.date.available2012-08-08T08:31:33Z-
dc.date.issued1995en_US
dc.identifier.citationApplied Physics A Materials Science & Processing, 1995, v. 61 n. 1, p. 45-50en_US
dc.identifier.issn0947-8396en_US
dc.identifier.urihttp://hdl.handle.net/10722/155023-
dc.description.abstractConventional fabrication method of porous silicon is anodisation of single crystal silicon in hydrofluoric acid. In this report, we show that it is possible to fabricate porous silicon by laser-induced etching. An earlier report by us has demonstrated the dependence of porous silicon photoluminescence characteristic on the etching laser wavelength [1]. Here we used 780 nm line from a diode laser as the etching source, and the optimum etching conditions were obtained. A simple model was proposed to explain the etching process. Scanning Electron Microscope (SEM) images of the samples support the proposed process. © 1995 Springer-Verlag.en_US
dc.languageengen_US
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_US
dc.relation.ispartofApplied Physics A Materials Science & Processingen_US
dc.subject78.65en_US
dc.subject81.60.Cpen_US
dc.subject82.50en_US
dc.titleLaser-induced etching of siliconen_US
dc.typeArticleen_US
dc.identifier.emailChoy, CH:chchoy@eee.hku.hken_US
dc.identifier.authorityChoy, CH=rp00218en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1007/BF01538209en_US
dc.identifier.scopuseid_2-s2.0-0029345177en_US
dc.identifier.volume61en_US
dc.identifier.issue1en_US
dc.identifier.spage45en_US
dc.identifier.epage50en_US
dc.publisher.placeGermanyen_US
dc.identifier.scopusauthoridChoy, CH=7006202371en_US
dc.identifier.scopusauthoridCheah, KW=35315330600en_US

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