File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Comparison of GaInP/GaAs heterostructure-emitter bipolar transistors and heterojunction bipolar transistors

TitleComparison of GaInP/GaAs heterostructure-emitter bipolar transistors and heterojunction bipolar transistors
Authors
Issue Date1995
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1995, v. 42 n. 7, p. 1210-1215 How to Cite?
AbstractCarbon-doped GaInP/GaAs heterojunction bipolar transistors (HBT's) and heterostructure-emitter bipolar transistors (HEBT's) grown by MOCVD were fabricated. Experimental comparison of HBT's and HEBT's has been made based on the dc and the RF performance. HBT's have higher current gains than those of HEBT's in the high current regime, while HEBT's offer a smaller offset voltage and better uniformity in dc characteristics across the wafer. The current gain and cutoff frequency of the HEBT with a 150 angstroms emitter set-back layer are comparable to those of HBT's. DC (differential) current gains of 600 (900) and 560 (900) were obtained at a collector current density of 2.5×104 A/cm2 for the HBT and HEBT, respectively. The cutoff frequencies are 37 and 31 GHz for the HBT and HEBT, respectively. It is shown that there is negligible contribution of the diffusion capacitance to the emitter capacitance in HEBT's with a thin emitter set-back layer but not with a thick emitter set-back layer. The behavior of HEBT's both in dc and RF characteristics is similar to that of HBT's.
Persistent Identifierhttp://hdl.handle.net/10722/155022
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436

 

DC FieldValueLanguage
dc.contributor.authorYang, YueFeien_US
dc.contributor.authorHsu, ChungChien_US
dc.contributor.authorYang, Edward Sen_US
dc.contributor.authorChen, YKen_US
dc.date.accessioned2012-08-08T08:31:32Z-
dc.date.available2012-08-08T08:31:32Z-
dc.date.issued1995en_US
dc.identifier.citationIeee Transactions On Electron Devices, 1995, v. 42 n. 7, p. 1210-1215en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/155022-
dc.description.abstractCarbon-doped GaInP/GaAs heterojunction bipolar transistors (HBT's) and heterostructure-emitter bipolar transistors (HEBT's) grown by MOCVD were fabricated. Experimental comparison of HBT's and HEBT's has been made based on the dc and the RF performance. HBT's have higher current gains than those of HEBT's in the high current regime, while HEBT's offer a smaller offset voltage and better uniformity in dc characteristics across the wafer. The current gain and cutoff frequency of the HEBT with a 150 angstroms emitter set-back layer are comparable to those of HBT's. DC (differential) current gains of 600 (900) and 560 (900) were obtained at a collector current density of 2.5×104 A/cm2 for the HBT and HEBT, respectively. The cutoff frequencies are 37 and 31 GHz for the HBT and HEBT, respectively. It is shown that there is negligible contribution of the diffusion capacitance to the emitter capacitance in HEBT's with a thin emitter set-back layer but not with a thick emitter set-back layer. The behavior of HEBT's both in dc and RF characteristics is similar to that of HBT's.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.titleComparison of GaInP/GaAs heterostructure-emitter bipolar transistors and heterojunction bipolar transistorsen_US
dc.typeArticleen_US
dc.identifier.emailYang, Edward S:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, Edward S=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/16.391200en_US
dc.identifier.scopuseid_2-s2.0-0029342304en_US
dc.identifier.volume42en_US
dc.identifier.issue7en_US
dc.identifier.spage1210en_US
dc.identifier.epage1215en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYang, YueFei=7409383278en_US
dc.identifier.scopusauthoridHsu, ChungChi=7404947020en_US
dc.identifier.scopusauthoridYang, Edward S=7202021229en_US
dc.identifier.scopusauthoridChen, YK=7601439922en_US

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats