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Article: Wavelength dependence in photosynthesis of porous silicon dot

TitleWavelength dependence in photosynthesis of porous silicon dot
Authors
Issue Date1994
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 1994, v. 91 n. 10, p. 795-797 How to Cite?
AbstractPorous silicon dot was fabricated by laser induced etching of single crystal silicon wafer immersed in hydrofluoric solution. The result shows that there is strong photo-chemical reaction on the laser irradiated silicon surface. Various incident wavelengths have been used to fabricate the porous silicon dots. It is found that there is a significant shift in photoluminescence peak when using infra-red light as etching wavelength. We proposed that there are two possible mechanisms responsible for the shift; one is electronic and the other is photo-chemical. © 1994.
Persistent Identifierhttp://hdl.handle.net/10722/155005
ISSN
2015 Impact Factor: 1.458
2015 SCImago Journal Rankings: 0.776

 

DC FieldValueLanguage
dc.contributor.authorCheah, KWen_US
dc.contributor.authorChoy, CHen_US
dc.date.accessioned2012-08-08T08:31:28Z-
dc.date.available2012-08-08T08:31:28Z-
dc.date.issued1994en_US
dc.identifier.citationSolid State Communications, 1994, v. 91 n. 10, p. 795-797en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://hdl.handle.net/10722/155005-
dc.description.abstractPorous silicon dot was fabricated by laser induced etching of single crystal silicon wafer immersed in hydrofluoric solution. The result shows that there is strong photo-chemical reaction on the laser irradiated silicon surface. Various incident wavelengths have been used to fabricate the porous silicon dots. It is found that there is a significant shift in photoluminescence peak when using infra-red light as etching wavelength. We proposed that there are two possible mechanisms responsible for the shift; one is electronic and the other is photo-chemical. © 1994.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sscen_US
dc.relation.ispartofSolid State Communicationsen_US
dc.titleWavelength dependence in photosynthesis of porous silicon doten_US
dc.typeArticleen_US
dc.identifier.emailChoy, CH:chchoy@eee.hku.hken_US
dc.identifier.authorityChoy, CH=rp00218en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0028495866en_US
dc.identifier.volume91en_US
dc.identifier.issue10en_US
dc.identifier.spage795en_US
dc.identifier.epage797en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridCheah, KW=7102792922en_US
dc.identifier.scopusauthoridChoy, CH=7006202371en_US

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