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Conference Paper: Nonalloyed ohmic contacts to N-Si using a strained Si0.5Ge0.5 buffer layer

TitleNonalloyed ohmic contacts to N-Si using a strained Si0.5Ge0.5 buffer layer
Authors
Issue Date1994
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Materials Research Society Symposium Proceedings, 1994, v. 320, p. 317-322 How to Cite?
AbstractNonalloyed shallow ohmic contacts to n-Si have been fabricated by using an 80 angstrom thick strained Si0.5Ge0.5 buffer layer grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was employed to investigate the Si 2p and Ge 3d core level binding energies of the strained and the relaxed Si0.5Ge0.5 and to determine their relative Fermi level positions. It was found that the surfaces of strained Si0.5Ge0.5 exhibit pinning very close to the conduction band. Rutherford backscattering and Auger depth profiling were employed to determine the contact reactions using Ti, W or Pt as contact metals. In the case of Pt, a 500 angstrom W diffusion barrier can protect the ohmic behavior up to 550 °C for 30 min. The specific contact resistance of the Pt/W/Si0.5Ge0.5/n-Si contact extracted from the D-type cross-bridge Kelvin resistor was 3.5×10-5 Ω·cm2.
Persistent Identifierhttp://hdl.handle.net/10722/154994
ISSN

 

DC FieldValueLanguage
dc.contributor.authorLiou, HsingKuenen_US
dc.contributor.authorYang, Edward Sen_US
dc.contributor.authorTu, KNen_US
dc.date.accessioned2012-08-08T08:31:26Z-
dc.date.available2012-08-08T08:31:26Z-
dc.date.issued1994en_US
dc.identifier.citationMaterials Research Society Symposium Proceedings, 1994, v. 320, p. 317-322en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/10722/154994-
dc.description.abstractNonalloyed shallow ohmic contacts to n-Si have been fabricated by using an 80 angstrom thick strained Si0.5Ge0.5 buffer layer grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was employed to investigate the Si 2p and Ge 3d core level binding energies of the strained and the relaxed Si0.5Ge0.5 and to determine their relative Fermi level positions. It was found that the surfaces of strained Si0.5Ge0.5 exhibit pinning very close to the conduction band. Rutherford backscattering and Auger depth profiling were employed to determine the contact reactions using Ti, W or Pt as contact metals. In the case of Pt, a 500 angstrom W diffusion barrier can protect the ohmic behavior up to 550 °C for 30 min. The specific contact resistance of the Pt/W/Si0.5Ge0.5/n-Si contact extracted from the D-type cross-bridge Kelvin resistor was 3.5×10-5 Ω·cm2.en_US
dc.languageengen_US
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_US
dc.relation.ispartofMaterials Research Society Symposium Proceedingsen_US
dc.titleNonalloyed ohmic contacts to N-Si using a strained Si0.5Ge0.5 buffer layeren_US
dc.typeConference_Paperen_US
dc.identifier.emailYang, Edward S:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, Edward S=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0028062317en_US
dc.identifier.volume320en_US
dc.identifier.spage317en_US
dc.identifier.epage322en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLiou, HsingKuen=7102330018en_US
dc.identifier.scopusauthoridYang, Edward S=7202021229en_US
dc.identifier.scopusauthoridTu, KN=16198913200en_US

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