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Article: Influence of device structure and growth conditions on the tunneling characteristics of Si/Si1-xGex double barrier structures

TitleInfluence of device structure and growth conditions on the tunneling characteristics of Si/Si1-xGex double barrier structures
Authors
KeywordsGe Spacer Layer Grading
Hole Resonant Tunneling Structures
Si/Si1-Xgex
Issue Date1993
Citation
Journal Of Electronic Materials, 1993, v. 22 n. 9, p. 1173-1177 How to Cite?
AbstractWe have investigated different Si/Si1-xGex hole resonant tunneling structures. We demonstrate the advantages of grading the Ge concentration in the spacer layers, which allows for a smoother potential profile in the spacer layers and a higher Ge concentration in the well, and hence higher bandoffsets. This leads to an improvement of the resonances seen in the I-V characteristics of these devices. Structures grown at different temperatures emphasize the importance of obtaining abrupt Si/Si1-xGex double barrier heterointerfaces in order to obtain good I-V characteristics. Short-term post annealing at {equal to or succeeds}500°C, well below temperatures where strain relaxation or dopant diffusion into the barrier layers occur, is shown to destroy the resonances. We believe this is due to monolayer interdiffusion at the barriers, destroying the abruptness of the interfaces. © 1993 The Minerals, Metals & Materials Society.
Persistent Identifierhttp://hdl.handle.net/10722/154985
ISSN
2015 Impact Factor: 1.491
2015 SCImago Journal Rankings: 0.609
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorGennser, Uen_US
dc.contributor.authorKesan, VPen_US
dc.contributor.authorIyer, SSen_US
dc.contributor.authorOtt, JAen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:24Z-
dc.date.available2012-08-08T08:31:24Z-
dc.date.issued1993en_US
dc.identifier.citationJournal Of Electronic Materials, 1993, v. 22 n. 9, p. 1173-1177en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://hdl.handle.net/10722/154985-
dc.description.abstractWe have investigated different Si/Si1-xGex hole resonant tunneling structures. We demonstrate the advantages of grading the Ge concentration in the spacer layers, which allows for a smoother potential profile in the spacer layers and a higher Ge concentration in the well, and hence higher bandoffsets. This leads to an improvement of the resonances seen in the I-V characteristics of these devices. Structures grown at different temperatures emphasize the importance of obtaining abrupt Si/Si1-xGex double barrier heterointerfaces in order to obtain good I-V characteristics. Short-term post annealing at {equal to or succeeds}500°C, well below temperatures where strain relaxation or dopant diffusion into the barrier layers occur, is shown to destroy the resonances. We believe this is due to monolayer interdiffusion at the barriers, destroying the abruptness of the interfaces. © 1993 The Minerals, Metals & Materials Society.en_US
dc.languageengen_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.subjectGe Spacer Layer Gradingen_US
dc.subjectHole Resonant Tunneling Structuresen_US
dc.subjectSi/Si1-Xgexen_US
dc.titleInfluence of device structure and growth conditions on the tunneling characteristics of Si/Si1-xGex double barrier structuresen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1007/BF02817691en_US
dc.identifier.scopuseid_2-s2.0-0027656714en_US
dc.identifier.volume22en_US
dc.identifier.issue9en_US
dc.identifier.spage1173en_US
dc.identifier.epage1177en_US
dc.identifier.isiWOS:A1993LW84800010-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridGennser, U=7003475817en_US
dc.identifier.scopusauthoridKesan, VP=6701760274en_US
dc.identifier.scopusauthoridIyer, SS=7202947597en_US
dc.identifier.scopusauthoridOtt, JA=7202757148en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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