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Article: Deep-depletion-layer impact-ionization-induced gate-oxide breakdown in thin-oxide n-MOSFETs

TitleDeep-depletion-layer impact-ionization-induced gate-oxide breakdown in thin-oxide n-MOSFETs
Authors
Issue Date1993
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 1993, v. 36 n. 8, p. 1155-1160 How to Cite?
AbstractThis work extensively examines gate-oxide breakdown behaviours of n-MOSFETs by means of enhancement-type and depletion-type devices with various channel dimensions under different operation conditions. The results indicate that positive-charge accumulation in gate oxide is only one of the processes occurring during high-field stress but is not the main cause for gate-oxide breakdown. The accelerated gate-oxide breakdown in MOSFETs is initiated by interface states at the Si-SiO2 interface, which are generated from the following process: holes created by impact ionization in the deep-depletion layer of the drain are injected into the gate oxide and trapped near the Si-SiO2 interface; then they recombine with hot electrons crossing the interface. In addition, gate-oxide breakdown at the gate-and-drain overlap may lead to that between gate and source.
Persistent Identifierhttp://hdl.handle.net/10722/154984
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHuang, MQen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorMa, ZJen_US
dc.contributor.authorWong, Hen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:31:23Z-
dc.date.available2012-08-08T08:31:23Z-
dc.date.issued1993en_US
dc.identifier.citationSolid-State Electronics, 1993, v. 36 n. 8, p. 1155-1160en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154984-
dc.description.abstractThis work extensively examines gate-oxide breakdown behaviours of n-MOSFETs by means of enhancement-type and depletion-type devices with various channel dimensions under different operation conditions. The results indicate that positive-charge accumulation in gate oxide is only one of the processes occurring during high-field stress but is not the main cause for gate-oxide breakdown. The accelerated gate-oxide breakdown in MOSFETs is initiated by interface states at the Si-SiO2 interface, which are generated from the following process: holes created by impact ionization in the deep-depletion layer of the drain are injected into the gate oxide and trapped near the Si-SiO2 interface; then they recombine with hot electrons crossing the interface. In addition, gate-oxide breakdown at the gate-and-drain overlap may lead to that between gate and source.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid-State Electronicsen_US
dc.titleDeep-depletion-layer impact-ionization-induced gate-oxide breakdown in thin-oxide n-MOSFETsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/0038-1101(93)90196-Wen_US
dc.identifier.scopuseid_2-s2.0-0027644339en_US
dc.identifier.volume36en_US
dc.identifier.issue8en_US
dc.identifier.spage1155en_US
dc.identifier.epage1160en_US
dc.identifier.isiWOS:A1993LK58000012-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridHuang, MQ=7404259759en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridMa, ZJ=7403600924en_US
dc.identifier.scopusauthoridWong, H=7402864932en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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