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Article: Mechanisms for hot-carrier-induced degradation in reoxidized-nitrided-oxide n-MOSFET's under combined AC/DC stressing

TitleMechanisms for hot-carrier-induced degradation in reoxidized-nitrided-oxide n-MOSFET's under combined AC/DC stressing
Authors
Issue Date1993
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1993, v. 40 n. 6, p. 1112-1118 How to Cite?
AbstractHot-carrier-induced degradation behaviors of reoxidized-nitrided-oxide (RNO) n-MOSFET's under combined ac/dc stressing have been extensively studied and are compared with conventional-oxide (OX) MOSFET's. As distinct from OX devices, reduced degradation rate can be observed for RNO devices under dynamic stressing versus the corresponding static stressing. A degradation mechanism is proposed in which trapped holes in stressed gate oxide are neutralized by an ensuing hot-electron injection, leaving lots of neutral electron traps in the gate oxide, with no significant generation of interface states. The degradation behaviors of threshold voltage, subthreshold gate-voltage swing, and charge-pumping current during a series of ac/dc stressings support this proposed mechanism. The neutral electron traps introduced by ac stress are believed to be some broken strained bonds caused by both hot-hole injection and recombination of the trapped holes with the injected electrons. RNO device degradation during AC stressing arises mainly from the charge trapping in gate oxide rather than the generation of interface states due to the hardening of Si/SiO2 interface by nitridation/reoxidation steps. Moreover, the ac-stressed RNO devices are significantly inferior to fresh RNO devices in terms of dc stressing due to a lot of neutral electron traps in the gate oxide resulted from the ac stressing.
Persistent Identifierhttp://hdl.handle.net/10722/154982
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMa, ZhiJianen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLiu, Zhi Hongen_US
dc.contributor.authorKo, Ping Ken_US
dc.contributor.authorCheng, Yiu Chungen_US
dc.date.accessioned2012-08-08T08:31:23Z-
dc.date.available2012-08-08T08:31:23Z-
dc.date.issued1993en_US
dc.identifier.citationIeee Transactions On Electron Devices, 1993, v. 40 n. 6, p. 1112-1118en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/154982-
dc.description.abstractHot-carrier-induced degradation behaviors of reoxidized-nitrided-oxide (RNO) n-MOSFET's under combined ac/dc stressing have been extensively studied and are compared with conventional-oxide (OX) MOSFET's. As distinct from OX devices, reduced degradation rate can be observed for RNO devices under dynamic stressing versus the corresponding static stressing. A degradation mechanism is proposed in which trapped holes in stressed gate oxide are neutralized by an ensuing hot-electron injection, leaving lots of neutral electron traps in the gate oxide, with no significant generation of interface states. The degradation behaviors of threshold voltage, subthreshold gate-voltage swing, and charge-pumping current during a series of ac/dc stressings support this proposed mechanism. The neutral electron traps introduced by ac stress are believed to be some broken strained bonds caused by both hot-hole injection and recombination of the trapped holes with the injected electrons. RNO device degradation during AC stressing arises mainly from the charge trapping in gate oxide rather than the generation of interface states due to the hardening of Si/SiO2 interface by nitridation/reoxidation steps. Moreover, the ac-stressed RNO devices are significantly inferior to fresh RNO devices in terms of dc stressing due to a lot of neutral electron traps in the gate oxide resulted from the ac stressing.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.titleMechanisms for hot-carrier-induced degradation in reoxidized-nitrided-oxide n-MOSFET's under combined AC/DC stressingen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/16.214737en_US
dc.identifier.scopuseid_2-s2.0-0027610589en_US
dc.identifier.volume40en_US
dc.identifier.issue6en_US
dc.identifier.spage1112en_US
dc.identifier.epage1118en_US
dc.identifier.isiWOS:A1993LC00500011-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridMa, ZhiJian=7403600924en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridLiu, Zhi Hong=7406683158en_US
dc.identifier.scopusauthoridKo, Ping K=7102478119en_US
dc.identifier.scopusauthoridCheng, Yiu Chung=27167728600en_US

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