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Article: Off-state instabilities in thermally nitrided-oxide n-MOSFETs

TitleOff-state instabilities in thermally nitrided-oxide n-MOSFETs
Authors
Issue Date1993
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1993, v. 40 n. 1, p. 125-130 How to Cite?
AbstractThe significant off-stage gate current of nitrided-oxide n-MOSFETs can be attributed to severe hot-hole injection into the gate oxide during band-to-band (B-B) tunneling due to a nitridation-induced lowering of barrier height for hole injection. Some of the injected holes are even trapped in the gate oxide above the deep-depletion layer of drain and thus decrease the gate-induced drain leakage (GIDL) current. A subsequent hot-electron injection into the gate oxide can neutralize these trapped holes and make the reduced GIDL current recover, even increase beyond the original value. The proposed mechanism of the GIDL degradation and recovery behaviors can be confirmed by the observed change in the ratio of the substrate to source currents, as well as by the field-distribution analysis of the gate oxide under stressing.
Persistent Identifierhttp://hdl.handle.net/10722/154975
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMa, ZJen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:31:21Z-
dc.date.available2012-08-08T08:31:21Z-
dc.date.issued1993en_US
dc.identifier.citationIeee Transactions On Electron Devices, 1993, v. 40 n. 1, p. 125-130en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/154975-
dc.description.abstractThe significant off-stage gate current of nitrided-oxide n-MOSFETs can be attributed to severe hot-hole injection into the gate oxide during band-to-band (B-B) tunneling due to a nitridation-induced lowering of barrier height for hole injection. Some of the injected holes are even trapped in the gate oxide above the deep-depletion layer of drain and thus decrease the gate-induced drain leakage (GIDL) current. A subsequent hot-electron injection into the gate oxide can neutralize these trapped holes and make the reduced GIDL current recover, even increase beyond the original value. The proposed mechanism of the GIDL degradation and recovery behaviors can be confirmed by the observed change in the ratio of the substrate to source currents, as well as by the field-distribution analysis of the gate oxide under stressing.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.titleOff-state instabilities in thermally nitrided-oxide n-MOSFETsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/16.249434en_US
dc.identifier.scopuseid_2-s2.0-0027187366en_US
dc.identifier.volume40en_US
dc.identifier.issue1en_US
dc.identifier.spage125en_US
dc.identifier.epage130en_US
dc.identifier.isiWOS:A1993KC14400019-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridMa, ZJ=7403600924en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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