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Article: Electrical characterization and simulation of substrate current in n-MOSFETs with nitrided/reoxidized-nitrided oxides as gate dielectrics

TitleElectrical characterization and simulation of substrate current in n-MOSFETs with nitrided/reoxidized-nitrided oxides as gate dielectrics
Authors
Issue Date1992
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 1992, v. 35 n. 10, p. 1433-1439 How to Cite?
AbstractThree kinds of n-MOSFETs were fabricated with different gate dielectrics: (a) OX: as-grown control oxide, (b) RTN: OX oxide with rapid thermal nitridation, and (c) RONO: OX oxide with nitridation and reoxidation by furnace annealing. Both the RTN and RONO devices show a lower substrate current ISUB as compared to the OX devices. Their ISUB can be characterized and simulated reasonably well, by using the ISUB characterization method and the basic ISUB model which are used for the OX devices. The results of characterization and simulation indicate that the nitridation or reoxidation step has little effect on the ionization rate of channel electrons. It is also confirmed that the lower ISUB of the RTN devices mainly resulted from the degradation in inversion-layer effective mobility •EFF due to nitridation, while that for RONO devices is caused by, not only the degraded •EFF, but also an increased gate-oxide thickness due to reoxidation. Therefore, the decrease in ISUB for RTN and RONO devices arises from the nitridation/reoxidation steps. In a word, even if the devices undergo a nitridation step with or without reoxidation, the basic ISUB model has been proved to be still applicable in regardless of the nitridation method.
Persistent Identifierhttp://hdl.handle.net/10722/154969
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMa, ZJen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:31:20Z-
dc.date.available2012-08-08T08:31:20Z-
dc.date.issued1992en_US
dc.identifier.citationSolid-State Electronics, 1992, v. 35 n. 10, p. 1433-1439en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154969-
dc.description.abstractThree kinds of n-MOSFETs were fabricated with different gate dielectrics: (a) OX: as-grown control oxide, (b) RTN: OX oxide with rapid thermal nitridation, and (c) RONO: OX oxide with nitridation and reoxidation by furnace annealing. Both the RTN and RONO devices show a lower substrate current ISUB as compared to the OX devices. Their ISUB can be characterized and simulated reasonably well, by using the ISUB characterization method and the basic ISUB model which are used for the OX devices. The results of characterization and simulation indicate that the nitridation or reoxidation step has little effect on the ionization rate of channel electrons. It is also confirmed that the lower ISUB of the RTN devices mainly resulted from the degradation in inversion-layer effective mobility •EFF due to nitridation, while that for RONO devices is caused by, not only the degraded •EFF, but also an increased gate-oxide thickness due to reoxidation. Therefore, the decrease in ISUB for RTN and RONO devices arises from the nitridation/reoxidation steps. In a word, even if the devices undergo a nitridation step with or without reoxidation, the basic ISUB model has been proved to be still applicable in regardless of the nitridation method.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid-State Electronicsen_US
dc.titleElectrical characterization and simulation of substrate current in n-MOSFETs with nitrided/reoxidized-nitrided oxides as gate dielectricsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/0038-1101(92)90079-Ren_US
dc.identifier.scopuseid_2-s2.0-0026938663en_US
dc.identifier.volume35en_US
dc.identifier.issue10en_US
dc.identifier.spage1433en_US
dc.identifier.epage1439en_US
dc.identifier.isiWOS:A1992JP71900009-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridMa, ZJ=7403600924en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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