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Article: Hot-carrier-induced degradation in reoxidized-nitrided-oxide n-MOSFET's under mixed AC-DC stressing

TitleHot-carrier-induced degradation in reoxidized-nitrided-oxide n-MOSFET's under mixed AC-DC stressing
Authors
Issue Date1992
Citation
Electron Device Letters, 1992, v. 13 n. 6, p. 314-316 How to Cite?
AbstractReduced degradation rate can be observed for reoxidized-nitrided-oxide (RNO) n-MOSFETs under dynamic stressing versus the corresponding static stressing. A new degradation mechanism is proposed in which trapped holes in gate oxide are neutralized by the hot-electron injection, with no significant generation of interface states because of the hardening on Si/SiO2 interface by nitridation/reoxidation steps. The RNO device degradation during AC stressing arises mainly from the charge trapping in gate oxide rather than the generation of interface states. Moreover, the AC-stressed RNO devices are significantly inferior to the fresh RNO devices in terms of DC stressing, possibly due to lots of neutral electron traps in gate oxide resulting from the AC stressing.
Persistent Identifierhttp://hdl.handle.net/10722/154966
ISSN

 

DC FieldValueLanguage
dc.contributor.authorMa, ZJen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:31:19Z-
dc.date.available2012-08-08T08:31:19Z-
dc.date.issued1992en_US
dc.identifier.citationElectron Device Letters, 1992, v. 13 n. 6, p. 314-316en_US
dc.identifier.issn0193-8576en_US
dc.identifier.urihttp://hdl.handle.net/10722/154966-
dc.description.abstractReduced degradation rate can be observed for reoxidized-nitrided-oxide (RNO) n-MOSFETs under dynamic stressing versus the corresponding static stressing. A new degradation mechanism is proposed in which trapped holes in gate oxide are neutralized by the hot-electron injection, with no significant generation of interface states because of the hardening on Si/SiO2 interface by nitridation/reoxidation steps. The RNO device degradation during AC stressing arises mainly from the charge trapping in gate oxide rather than the generation of interface states. Moreover, the AC-stressed RNO devices are significantly inferior to the fresh RNO devices in terms of DC stressing, possibly due to lots of neutral electron traps in gate oxide resulting from the AC stressing.en_US
dc.languageengen_US
dc.relation.ispartofElectron device lettersen_US
dc.titleHot-carrier-induced degradation in reoxidized-nitrided-oxide n-MOSFET's under mixed AC-DC stressingen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0026882048en_US
dc.identifier.volume13en_US
dc.identifier.issue6en_US
dc.identifier.spage314en_US
dc.identifier.epage316en_US
dc.identifier.scopusauthoridMa, ZJ=7403600924en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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