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Article: Si-YBaCuO intermixing and reactive patterning technique

TitleSi-YBaCuO intermixing and reactive patterning technique
Authors
KeywordsAnnealing
Reactive Patterning
Ybco Films
Issue Date1992
Citation
Journal Of Electronic Materials, 1992, v. 21 n. 5, p. 487-494 How to Cite?
AbstractA novel Si-YBaCuO intermixing technique has been developed for patterning YBaCuO superconducting thin films on both insulating oxide substrates (MgO) and semiconductor substrates (Si). The electrical, structural, and interfacial properties of the Si-YBaCuO intermixed system have been studied using resistivity, x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy and Auger depth profiling measurements. The study showed that the reaction of Si with YBaCuO and formation of silicon oxides during a high temperature process destroyed superconductivity of the film and created an insulating film. On a MgO substrate, the patterning process was carried out by first patterning a silicon layer using photolithography or laser-direct-writing, followed by the deposition of YBaCuO film and annealing. For a silicon substrate, thin metal layers of Ag and Au were patterned as a buffer mask which defines the YBaCuO structures fabricated thereafter. Micron-sized (2-10 Μm) superconducting structures with zero resistance temperature above 77 K have been demonstrated. This technique has been used to fabricate current controlled HTS switches and interconnects. © 1992 TMS.
Persistent Identifierhttp://hdl.handle.net/10722/154963
ISSN
2015 Impact Factor: 1.491
2015 SCImago Journal Rankings: 0.609
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMa, QYen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorLaibowitz, RBen_US
dc.contributor.authorChang, CAen_US
dc.date.accessioned2012-08-08T08:31:18Z-
dc.date.available2012-08-08T08:31:18Z-
dc.date.issued1992en_US
dc.identifier.citationJournal Of Electronic Materials, 1992, v. 21 n. 5, p. 487-494en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://hdl.handle.net/10722/154963-
dc.description.abstractA novel Si-YBaCuO intermixing technique has been developed for patterning YBaCuO superconducting thin films on both insulating oxide substrates (MgO) and semiconductor substrates (Si). The electrical, structural, and interfacial properties of the Si-YBaCuO intermixed system have been studied using resistivity, x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy and Auger depth profiling measurements. The study showed that the reaction of Si with YBaCuO and formation of silicon oxides during a high temperature process destroyed superconductivity of the film and created an insulating film. On a MgO substrate, the patterning process was carried out by first patterning a silicon layer using photolithography or laser-direct-writing, followed by the deposition of YBaCuO film and annealing. For a silicon substrate, thin metal layers of Ag and Au were patterned as a buffer mask which defines the YBaCuO structures fabricated thereafter. Micron-sized (2-10 Μm) superconducting structures with zero resistance temperature above 77 K have been demonstrated. This technique has been used to fabricate current controlled HTS switches and interconnects. © 1992 TMS.en_US
dc.languageengen_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.subjectAnnealingen_US
dc.subjectReactive Patterningen_US
dc.subjectYbco Filmsen_US
dc.titleSi-YBaCuO intermixing and reactive patterning techniqueen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1007/BF02655614en_US
dc.identifier.scopuseid_2-s2.0-0026858023en_US
dc.identifier.volume21en_US
dc.identifier.issue5en_US
dc.identifier.spage487en_US
dc.identifier.epage494en_US
dc.identifier.isiWOS:A1992HV23900004-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridMa, QY=7402815617en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridLaibowitz, RB=7003809227en_US
dc.identifier.scopusauthoridChang, CA=7407042938en_US

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