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Article: Oxide-trap-induced instability in GIDL of thermally nitrided-oxide N-MOSFET's under stress

TitleOxide-trap-induced instability in GIDL of thermally nitrided-oxide N-MOSFET's under stress
Authors
Issue Date1992
Citation
Electron Device Letters, 1992, v. 13 n. 2, p. 77-79 How to Cite?
AbstractSome holes created from band-to-band (B-B) tunneling in the deep-depletion region of the drain can be injected into the gate oxide and reduce the vertical field there. As a result, gate-induced drain leakage (GIDL) current decreases. This kind of hot-hole injection depends on the voltage difference between the drain and gate, due to nitridation-induced lowering of the barrier height for hole injection at the SiO2/Si interface. The subsequent hot-electron injection can neutralize these trapped holes, and make the GIDL current recover, and even increase beyond its original value. Since the trapped charges also affect the lateral field, the observed change in the ratio of substrate to source currents further confirms the proposed mechanism for the GIDL degradation and recovery behavior.
Persistent Identifierhttp://hdl.handle.net/10722/154959
ISSN

 

DC FieldValueLanguage
dc.contributor.authorMa, ZJen_US
dc.contributor.authorLai, Pui Ten_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:31:18Z-
dc.date.available2012-08-08T08:31:18Z-
dc.date.issued1992en_US
dc.identifier.citationElectron Device Letters, 1992, v. 13 n. 2, p. 77-79en_US
dc.identifier.issn0193-8576en_US
dc.identifier.urihttp://hdl.handle.net/10722/154959-
dc.description.abstractSome holes created from band-to-band (B-B) tunneling in the deep-depletion region of the drain can be injected into the gate oxide and reduce the vertical field there. As a result, gate-induced drain leakage (GIDL) current decreases. This kind of hot-hole injection depends on the voltage difference between the drain and gate, due to nitridation-induced lowering of the barrier height for hole injection at the SiO2/Si interface. The subsequent hot-electron injection can neutralize these trapped holes, and make the GIDL current recover, and even increase beyond its original value. Since the trapped charges also affect the lateral field, the observed change in the ratio of substrate to source currents further confirms the proposed mechanism for the GIDL degradation and recovery behavior.en_US
dc.languageengen_US
dc.relation.ispartofElectron device lettersen_US
dc.titleOxide-trap-induced instability in GIDL of thermally nitrided-oxide N-MOSFET's under stressen_US
dc.typeArticleen_US
dc.identifier.emailLai, Pui T:laip@eee.hku.hken_US
dc.identifier.authorityLai, Pui T=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0026820196en_US
dc.identifier.volume13en_US
dc.identifier.issue2en_US
dc.identifier.spage77en_US
dc.identifier.epage79en_US
dc.identifier.scopusauthoridMa, ZJ=7403600924en_US
dc.identifier.scopusauthoridLai, Pui T=7202946460en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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