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Article: Impact of nitridation/reoxidation on performance degradation in n-MOSFETs under Fowler-Nordheim injection

TitleImpact of nitridation/reoxidation on performance degradation in n-MOSFETs under Fowler-Nordheim injection
Authors
Issue Date1992
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Citation
Solid-State Electronics, 1992, v. 35 n. 1, p. 95-102 How to Cite?
AbstractPerformance degradation of n-MOSFETs with conventional oxides, thermally nitrided oxides and reoxidized nitrided oxides as gate dielectrics was studied using Fowler-Nordheim injection. Their respective performance degradation rate and interface-state generation were characterized by combining capacitor capacitance-voltage and MOSFET subthreshold methods. Shift in both threshold voltage and flatband voltage exhibited a turnaround effect for devices with a large amount of hole traps in the oxide, with their values shifted negatively at first and then positively during injection. Light nitridation could induce a large number of hole traps in the oxide which resulted in a large negative threshold voltage shift, while heavy nitridation with sufficient reoxidation could suppress this effect. Nitridation, especially one with reoxidation, could reduce the density of interface states and improve its stability against Fowler-Nordheim injection, leading to a suppression of the positive threshold voltage shift. The stability of maximum transconductance and field-effect electron mobility in the inversion channel against the Fowler-Nordheim stressing can be greatly improved by the nitridation with or without reoxidation.
Persistent Identifierhttp://hdl.handle.net/10722/154956
ISSN
2015 Impact Factor: 1.345
2015 SCImago Journal Rankings: 0.675
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMa, ZJen_US
dc.contributor.authorLiu, ZHen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorFleischer, Sen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2012-08-08T08:31:17Z-
dc.date.available2012-08-08T08:31:17Z-
dc.date.issued1992en_US
dc.identifier.citationSolid-State Electronics, 1992, v. 35 n. 1, p. 95-102en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10722/154956-
dc.description.abstractPerformance degradation of n-MOSFETs with conventional oxides, thermally nitrided oxides and reoxidized nitrided oxides as gate dielectrics was studied using Fowler-Nordheim injection. Their respective performance degradation rate and interface-state generation were characterized by combining capacitor capacitance-voltage and MOSFET subthreshold methods. Shift in both threshold voltage and flatband voltage exhibited a turnaround effect for devices with a large amount of hole traps in the oxide, with their values shifted negatively at first and then positively during injection. Light nitridation could induce a large number of hole traps in the oxide which resulted in a large negative threshold voltage shift, while heavy nitridation with sufficient reoxidation could suppress this effect. Nitridation, especially one with reoxidation, could reduce the density of interface states and improve its stability against Fowler-Nordheim injection, leading to a suppression of the positive threshold voltage shift. The stability of maximum transconductance and field-effect electron mobility in the inversion channel against the Fowler-Nordheim stressing can be greatly improved by the nitridation with or without reoxidation.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sseen_US
dc.relation.ispartofSolid-State Electronicsen_US
dc.titleImpact of nitridation/reoxidation on performance degradation in n-MOSFETs under Fowler-Nordheim injectionen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/0038-1101(92)90310-9en_US
dc.identifier.scopuseid_2-s2.0-0026624293en_US
dc.identifier.volume35en_US
dc.identifier.issue1en_US
dc.identifier.spage95en_US
dc.identifier.epage102en_US
dc.identifier.isiWOS:A1992GY46300016-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridMa, ZJ=7403600924en_US
dc.identifier.scopusauthoridLiu, ZH=7406683158en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridFleischer, S=7103394445en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US

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