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Conference Paper: Two-dimensional electron gas emitter AlGaAs/GaAs heterojunction bipolar transistor with low offset voltage
Title | Two-dimensional electron gas emitter AlGaAs/GaAs heterojunction bipolar transistor with low offset voltage |
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Authors | |
Issue Date | 1991 |
Citation | Institute Of Physics Conference Series, 1991, v. 120, p. 311-315 How to Cite? |
Abstract | The authors report a novel 2-dimensional electron gas emitter heterojunction bipolar transistor which has a low offset voltage and a high gain. The concept used here is similar to a method used in α-Si/Si bipolar transistors to improve emitter carrier transport. |
Persistent Identifier | http://hdl.handle.net/10722/154951 |
ISSN | 2019 SCImago Journal Rankings: 0.104 |
DC Field | Value | Language |
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dc.contributor.author | Wang, Y | en_US |
dc.contributor.author | Wang, Q | en_US |
dc.contributor.author | Longenbach, KF | en_US |
dc.contributor.author | Yang, ES | en_US |
dc.contributor.author | Wang, WI | en_US |
dc.date.accessioned | 2012-08-08T08:31:16Z | - |
dc.date.available | 2012-08-08T08:31:16Z | - |
dc.date.issued | 1991 | en_US |
dc.identifier.citation | Institute Of Physics Conference Series, 1991, v. 120, p. 311-315 | en_US |
dc.identifier.issn | 0951-3248 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/154951 | - |
dc.description.abstract | The authors report a novel 2-dimensional electron gas emitter heterojunction bipolar transistor which has a low offset voltage and a high gain. The concept used here is similar to a method used in α-Si/Si bipolar transistors to improve emitter carrier transport. | en_US |
dc.language | eng | en_US |
dc.relation.ispartof | Institute of Physics Conference Series | en_US |
dc.title | Two-dimensional electron gas emitter AlGaAs/GaAs heterojunction bipolar transistor with low offset voltage | en_US |
dc.type | Conference_Paper | en_US |
dc.identifier.email | Yang, ES:esyang@hkueee.hku.hk | en_US |
dc.identifier.authority | Yang, ES=rp00199 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.scopus | eid_2-s2.0-0026371945 | en_US |
dc.identifier.volume | 120 | en_US |
dc.identifier.spage | 311 | en_US |
dc.identifier.epage | 315 | en_US |
dc.publisher.place | United Kingdom | en_US |
dc.identifier.scopusauthorid | Wang, Y=7601501822 | en_US |
dc.identifier.scopusauthorid | Wang, Q=7406911671 | en_US |
dc.identifier.scopusauthorid | Longenbach, KF=6603287889 | en_US |
dc.identifier.scopusauthorid | Yang, ES=7202021229 | en_US |
dc.identifier.scopusauthorid | Wang, WI=7501757397 | en_US |
dc.identifier.issnl | 0951-3248 | - |