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Article: Characterization of charge trapping and high-field endurance for 15-nm thermally nitrided oxides

TitleCharacterization of charge trapping and high-field endurance for 15-nm thermally nitrided oxides
Authors
Issue Date1991
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1991, v. 38 n. 2, p. 344-354 How to Cite?
AbstractDevice-quality gate oxides have been nitrided using both rapid thermal processing and conventional furnace treatment. Charge trapping and high-field endurance, including breakdown field and time-dependent dielectric breakdown, are investigated in detail. It is found that proper nitridation can eliminate positive charge accumulation in oxides, increase charge to breakdown, suppress high-field injection-induced interface state generation, and decrease the dependence of the breakdown field on the gate area as a result of the reduced density of microdefects. Experimental results show that although both the density and capture cross-section of the bulk and interface traps increased by nitridation, the combined effects of bulk and interface traps induced by high-field injection can improve the stability of the flatband voltage. For lightly nitrided oxides, the trap generation rate is greatly decreased as compared with the as-grown oxide. Not only are the density and capture cross-section of the traps affected by nitridation, but also the locations of the trapped-charge centroids are changed. Depending on the nitridation level and injection polarity, the centroid can move from 40 to 90-110 angstrom off the cathode. It is also shown that under high-field injection, both the charge to breakdown and the interface state increase are strongly dependent on injection polarity. This observation can be explained by a physical model which takes both charge trapping and its location into account. The experimental results for postnitridation annealing suggest that these property modifications most likely result from nitridation-induced structural changes rather than hydrogenation alone.
Persistent Identifierhttp://hdl.handle.net/10722/154936
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiu, Zhi Hongen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorCheng, Yiu Chungen_US
dc.date.accessioned2012-08-08T08:31:12Z-
dc.date.available2012-08-08T08:31:12Z-
dc.date.issued1991en_US
dc.identifier.citationIeee Transactions On Electron Devices, 1991, v. 38 n. 2, p. 344-354en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/10722/154936-
dc.description.abstractDevice-quality gate oxides have been nitrided using both rapid thermal processing and conventional furnace treatment. Charge trapping and high-field endurance, including breakdown field and time-dependent dielectric breakdown, are investigated in detail. It is found that proper nitridation can eliminate positive charge accumulation in oxides, increase charge to breakdown, suppress high-field injection-induced interface state generation, and decrease the dependence of the breakdown field on the gate area as a result of the reduced density of microdefects. Experimental results show that although both the density and capture cross-section of the bulk and interface traps increased by nitridation, the combined effects of bulk and interface traps induced by high-field injection can improve the stability of the flatband voltage. For lightly nitrided oxides, the trap generation rate is greatly decreased as compared with the as-grown oxide. Not only are the density and capture cross-section of the traps affected by nitridation, but also the locations of the trapped-charge centroids are changed. Depending on the nitridation level and injection polarity, the centroid can move from 40 to 90-110 angstrom off the cathode. It is also shown that under high-field injection, both the charge to breakdown and the interface state increase are strongly dependent on injection polarity. This observation can be explained by a physical model which takes both charge trapping and its location into account. The experimental results for postnitridation annealing suggest that these property modifications most likely result from nitridation-induced structural changes rather than hydrogenation alone.en_US
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.titleCharacterization of charge trapping and high-field endurance for 15-nm thermally nitrided oxidesen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/16.69916en_US
dc.identifier.scopuseid_2-s2.0-0026106461en_US
dc.identifier.volume38en_US
dc.identifier.issue2en_US
dc.identifier.spage344en_US
dc.identifier.epage354en_US
dc.identifier.isiWOS:A1991ET27600023-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLiu, Zhi Hong=7406683158en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US
dc.identifier.scopusauthoridCheng, Yiu Chung=27167728600en_US

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