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Conference Paper: Patterning of high T c superconducting thin films on Si substrates

TitlePatterning of high T c superconducting thin films on Si substrates
Authors
Issue Date1990
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 1990, v. 1292, p. 38-43 How to Cite?
AbstractInterdiffusion and reaction at the interface between an YBaCuO film and a Si substrate degrade the superconductivity of the film. Using a buffer layer, the film-substrate interaction can be reduced. Thus, a superconducting thin film is formed on a silicon substrate. We have developed a new method of patterning superconducting thin films based on the Si-YBaCuO intermixing. On a silicon substrate, a thin layer of noble metal was first evaporated and patterned using photolithography. An YBaCuO film was then deposited by e-beam evaporation and annealed in a rapid thermal processing system. After a high temperature annealing, the patterned feature became superconducting separated by Si-YBaCuO intermixed areas. We have demonstrated superconducting micron-sized line structures with T c of 73 K. This patterning technique may be useful for making high T c superconducting interconnects and devices on a Si wafer.
Persistent Identifierhttp://hdl.handle.net/10722/154931
ISSN

 

DC FieldValueLanguage
dc.contributor.authorMa, QYen_US
dc.contributor.authorShu, Cen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:31:11Z-
dc.date.available2012-08-08T08:31:11Z-
dc.date.issued1990en_US
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 1990, v. 1292, p. 38-43en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/10722/154931-
dc.description.abstractInterdiffusion and reaction at the interface between an YBaCuO film and a Si substrate degrade the superconductivity of the film. Using a buffer layer, the film-substrate interaction can be reduced. Thus, a superconducting thin film is formed on a silicon substrate. We have developed a new method of patterning superconducting thin films based on the Si-YBaCuO intermixing. On a silicon substrate, a thin layer of noble metal was first evaporated and patterned using photolithography. An YBaCuO film was then deposited by e-beam evaporation and annealed in a rapid thermal processing system. After a high temperature annealing, the patterned feature became superconducting separated by Si-YBaCuO intermixed areas. We have demonstrated superconducting micron-sized line structures with T c of 73 K. This patterning technique may be useful for making high T c superconducting interconnects and devices on a Si wafer.en_US
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_US
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.titlePatterning of high T c superconducting thin films on Si substratesen_US
dc.typeConference_Paperen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0025621259en_US
dc.identifier.volume1292en_US
dc.identifier.spage38en_US
dc.identifier.epage43en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridMa, QY=7402815617en_US
dc.identifier.scopusauthoridShu, C=23023374800en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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