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Article: Structural characterization of Ti and Pt thin films on GaAs(100) substrate

TitleStructural characterization of Ti and Pt thin films on GaAs(100) substrate
Authors
Wu, XYang, ESTheodore, ND
KeywordsInterfacial Morphology
Metal Thin Film
Ti & Pt On Gaas
Issue Date1990
Citation
Journal Of Electronic Materials, 1990, v. 19 n. 8, p. 821-823 How to Cite?
DOI: http://dx.doi.org/10.1007/BF02651391
AbstractIn an attempt to understand the Schottky barrier behavior of Ti/Pt/GaAs and Pt/Ti/ GaAs bimetal Schottky diodes, we have investigated the interfacial morphology of Ti and Pt thin films on GaAs(l00) substrate. The characterization was based on coverage profiling of Auger electron spectroscopy in conjunction with transmission electron microscopy. Emphasis was placed on film uniformity and atomic interdiffusion. The results showed Ga and As outdiffusion in Pt/GaAs interface and some oxygen incorporated in Ti film, but no evidence of clustering for both metal/GaAs systems. © 1990 The Mineral,Metal & Materials Society,Inc.
Persistent Identifierhttp://hdl.handle.net/10722/154921
ISSN
0361-5235
2023 Impact Factor: 2.2
2023 SCImago Journal Rankings: 0.439
ISI Accession Number ID
WOS:A1990DV91300010

 

DC FieldValueLanguage
dc.contributor.authorWu, Xen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorTheodore, NDen_US
dc.date.accessioned2012-08-08T08:31:09Z-
dc.date.available2012-08-08T08:31:09Z-
dc.date.issued1990en_US
dc.identifier.citationJournal Of Electronic Materials, 1990, v. 19 n. 8, p. 821-823en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://hdl.handle.net/10722/154921-
dc.description.abstractIn an attempt to understand the Schottky barrier behavior of Ti/Pt/GaAs and Pt/Ti/ GaAs bimetal Schottky diodes, we have investigated the interfacial morphology of Ti and Pt thin films on GaAs(l00) substrate. The characterization was based on coverage profiling of Auger electron spectroscopy in conjunction with transmission electron microscopy. Emphasis was placed on film uniformity and atomic interdiffusion. The results showed Ga and As outdiffusion in Pt/GaAs interface and some oxygen incorporated in Ti film, but no evidence of clustering for both metal/GaAs systems. © 1990 The Mineral,Metal & Materials Society,Inc.en_US
dc.languageengen_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.subjectInterfacial Morphologyen_US
dc.subjectMetal Thin Filmen_US
dc.subjectTi & Pt On Gaasen_US
dc.titleStructural characterization of Ti and Pt thin films on GaAs(100) substrateen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1007/BF02651391en_US
dc.identifier.scopuseid_2-s2.0-0025468353en_US
dc.identifier.volume19en_US
dc.identifier.issue8en_US
dc.identifier.spage821en_US
dc.identifier.epage823en_US
dc.identifier.isiWOS:A1990DV91300010-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWu, X=7407065023en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridTheodore, ND=7006310232en_US
dc.identifier.issnl0361-5235-

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