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Article: Effective metal screening and Schottky-barrier formation in metal-GaAs structures

TitleEffective metal screening and Schottky-barrier formation in metal-GaAs structures
Authors
Issue Date1990
Citation
Electron Device Letters, 1990, v. 11 n. 7, p. 315-317 How to Cite?
AbstractThe Fermi-level movement in a Schottky barrier is investigated using a bimetal thin-film structure. The functional dependence of the barrier height on the inner metal thickness is formulated in terms of the metal effective screening length and the interface trap states. This model is used to describe experimental results on Pt-Ti-GaAs and Ti-Pt-GaAs diodes. It is found that the effective screening lengths for Pt and Ti are 6.5 and 7.0 angstrom, respectively, significantly greater than the ideal values of the theory of N. F. Mott and H. Jones (1958). This indicates that the potential drop inside the metal electrode can evolve over several monolayers in a Schottky contact.
Persistent Identifierhttp://hdl.handle.net/10722/154920
ISSN

 

DC FieldValueLanguage
dc.contributor.authorWu, Xen_US
dc.contributor.authorYang, Edward Sen_US
dc.date.accessioned2012-08-08T08:31:09Z-
dc.date.available2012-08-08T08:31:09Z-
dc.date.issued1990en_US
dc.identifier.citationElectron Device Letters, 1990, v. 11 n. 7, p. 315-317en_US
dc.identifier.issn0193-8576en_US
dc.identifier.urihttp://hdl.handle.net/10722/154920-
dc.description.abstractThe Fermi-level movement in a Schottky barrier is investigated using a bimetal thin-film structure. The functional dependence of the barrier height on the inner metal thickness is formulated in terms of the metal effective screening length and the interface trap states. This model is used to describe experimental results on Pt-Ti-GaAs and Ti-Pt-GaAs diodes. It is found that the effective screening lengths for Pt and Ti are 6.5 and 7.0 angstrom, respectively, significantly greater than the ideal values of the theory of N. F. Mott and H. Jones (1958). This indicates that the potential drop inside the metal electrode can evolve over several monolayers in a Schottky contact.en_US
dc.languageengen_US
dc.relation.ispartofElectron device lettersen_US
dc.titleEffective metal screening and Schottky-barrier formation in metal-GaAs structuresen_US
dc.typeArticleen_US
dc.identifier.emailYang, Edward S:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, Edward S=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0025465309en_US
dc.identifier.volume11en_US
dc.identifier.issue7en_US
dc.identifier.spage315en_US
dc.identifier.epage317en_US
dc.identifier.scopusauthoridWu, X=7407065023en_US
dc.identifier.scopusauthoridYang, Edward S=7202021229en_US

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