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Article: AlGaAs/GaAs heterostructure-emitter bipolar transistor

TitleAlGaAs/GaAs heterostructure-emitter bipolar transistor
Authors
Issue Date1990
Citation
Electron Device Letters, 1990, v. 11 n. 6, p. 264-266 How to Cite?
AbstractAn AlGaAs/GaAs heterostructure-emitter bipolar transistor using separate carrier injection and confinement is discussed. A common-emitter current gain of 28 with BVCEO = 15 V was obtained at a base doping level of 1 × 1019/ cm3. No spacer layer was inserted in the structure. This transistor combines the merits of homojunction transistors and regular heterostructure bipolar transistors (HBTs) and is simple to fabricate.
Persistent Identifierhttp://hdl.handle.net/10722/154918
ISSN

 

DC FieldValueLanguage
dc.contributor.authorWu, Xen_US
dc.contributor.authorWang, YQen_US
dc.contributor.authorLuo, LFen_US
dc.contributor.authorYang, Edward Sen_US
dc.date.accessioned2012-08-08T08:31:09Z-
dc.date.available2012-08-08T08:31:09Z-
dc.date.issued1990en_US
dc.identifier.citationElectron Device Letters, 1990, v. 11 n. 6, p. 264-266en_US
dc.identifier.issn0193-8576en_US
dc.identifier.urihttp://hdl.handle.net/10722/154918-
dc.description.abstractAn AlGaAs/GaAs heterostructure-emitter bipolar transistor using separate carrier injection and confinement is discussed. A common-emitter current gain of 28 with BVCEO = 15 V was obtained at a base doping level of 1 × 1019/ cm3. No spacer layer was inserted in the structure. This transistor combines the merits of homojunction transistors and regular heterostructure bipolar transistors (HBTs) and is simple to fabricate.en_US
dc.languageengen_US
dc.relation.ispartofElectron device lettersen_US
dc.titleAlGaAs/GaAs heterostructure-emitter bipolar transistoren_US
dc.typeArticleen_US
dc.identifier.emailYang, Edward S:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, Edward S=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0025448784en_US
dc.identifier.volume11en_US
dc.identifier.issue6en_US
dc.identifier.spage264en_US
dc.identifier.epage266en_US
dc.identifier.scopusauthoridWu, X=7407065023en_US
dc.identifier.scopusauthoridWang, YQ=7601501822en_US
dc.identifier.scopusauthoridLuo, LF=22994080200en_US
dc.identifier.scopusauthoridYang, Edward S=7202021229en_US

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