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Article: Charge trapping and interface state generation by avalanche hot-electron injection in rapid thermal NH3 annealed and reoxidized SiO2 films

TitleCharge trapping and interface state generation by avalanche hot-electron injection in rapid thermal NH3 annealed and reoxidized SiO2 films
Authors
Issue Date1990
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JES
Citation
Journal Of The Electrochemical Society, 1990, v. 137 n. 6, p. 1871-1876 How to Cite?
AbstractIn order to meet the needs of ultra large scale integration, SiO2 films are usually annealed prior to their use as the gate dielectric material in insulated gate field effect transistors (IGFETs). Using rapid thermal processing (RTP), SiO2 films with a thickness of 35 nm were annealed in NH3 and subsequently reoxidized. The properties of charge trapping and interface state generation of these films were investigated by an avalanche hot-electron injection technique. Experimental results indicate that by reoxidation, both the density of NH3 annealing induced traps and their capture cross section can be reduced; the hardness of the interface against hot-electron bombardment is improved while the low oxide fixed charge and interface state density as well as the high breakdown field are also preserved. An oxygen deficiency model can be used to explain the origin of these traps as well as the generation of interface states and the mechanism of reoxidation.
Persistent Identifierhttp://hdl.handle.net/10722/154917
ISSN
2015 Impact Factor: 3.014
2015 SCImago Journal Rankings: 1.157

 

DC FieldValueLanguage
dc.contributor.authorLiu, ZHen_US
dc.contributor.authorChen, PSen_US
dc.contributor.authorCheng, YCen_US
dc.contributor.authorLai, PTen_US
dc.date.accessioned2012-08-08T08:31:08Z-
dc.date.available2012-08-08T08:31:08Z-
dc.date.issued1990en_US
dc.identifier.citationJournal Of The Electrochemical Society, 1990, v. 137 n. 6, p. 1871-1876en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/10722/154917-
dc.description.abstractIn order to meet the needs of ultra large scale integration, SiO2 films are usually annealed prior to their use as the gate dielectric material in insulated gate field effect transistors (IGFETs). Using rapid thermal processing (RTP), SiO2 films with a thickness of 35 nm were annealed in NH3 and subsequently reoxidized. The properties of charge trapping and interface state generation of these films were investigated by an avalanche hot-electron injection technique. Experimental results indicate that by reoxidation, both the density of NH3 annealing induced traps and their capture cross section can be reduced; the hardness of the interface against hot-electron bombardment is improved while the low oxide fixed charge and interface state density as well as the high breakdown field are also preserved. An oxygen deficiency model can be used to explain the origin of these traps as well as the generation of interface states and the mechanism of reoxidation.en_US
dc.languageengen_US
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JESen_US
dc.relation.ispartofJournal of the Electrochemical Societyen_US
dc.titleCharge trapping and interface state generation by avalanche hot-electron injection in rapid thermal NH3 annealed and reoxidized SiO2 filmsen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT:laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0025448427en_US
dc.identifier.volume137en_US
dc.identifier.issue6en_US
dc.identifier.spage1871en_US
dc.identifier.epage1876en_US
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLiu, ZH=7406683158en_US
dc.identifier.scopusauthoridChen, PS=7408354789en_US
dc.identifier.scopusauthoridCheng, YC=27167728600en_US
dc.identifier.scopusauthoridLai, PT=7202946460en_US

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